Abstract
Films of Ce0.9Gd0.1O2-δ(CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD processing parameters is studied. It is found that the laser fluence has no significant impact on the film density, whereas the substrate temperature and the oxygen pressure are of essential importance for the film microstructure development. The reduction of deposition temperature down to 250 oC together with a lowered oxygen pressure of 0.05 mbar, significantly inhibits the growth of columnar structures. Further decrease in oxygen pressure, to 0.005 mbar, promotes film densifications, but a stress build-up is observed and leads to a lattice-parameter enlargement of the coatings. The chemical films composition is affected by the applied fluence. At a low fluence, 0.5 J/cm², a congruent transfer is obtained while a relative Gd enrichment results for substantially higher fluences (3.5-5.5 J/cm²).
Original language | English |
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Publication date | 2009 |
Publication status | Published - 2009 |
Event | European Materials Research Society: 2009 Spring meeting - Strasbourg, France Duration: 8 Jun 2009 → 12 Jun 2009 http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=510&Itemid=1560 |
Conference
Conference | European Materials Research Society |
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Country/Territory | France |
City | Strasbourg |
Period | 08/06/2009 → 12/06/2009 |
Internet address |
Keywords
- gadolnia-doped ceria
- stress
- low temperature deposition
- pulsed laser depsoition