Fabrication with Semiconductor Packaging Technologies and Characterization of a Large‐Scale Flexible Thermoelectric Module

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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Fabrication with Semiconductor Packaging Technologies and Characterization of a Large‐Scale Flexible Thermoelectric Module. / Sugahara, Tohru; Ekubaru, Yusufu; Van Nong, Ngo; Kagami, Noriko; Ohata, Keiichi; Hung, Le Thanh; Okajima, Michio; Nambu, Shutaro; Suganuma, Katsuaki.

In: Advanced Materials Technologies, Vol. 4, No. 2, 1800556, 2019.

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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Sugahara, Tohru ; Ekubaru, Yusufu ; Van Nong, Ngo ; Kagami, Noriko ; Ohata, Keiichi ; Hung, Le Thanh ; Okajima, Michio ; Nambu, Shutaro ; Suganuma, Katsuaki. / Fabrication with Semiconductor Packaging Technologies and Characterization of a Large‐Scale Flexible Thermoelectric Module. In: Advanced Materials Technologies. 2019 ; Vol. 4, No. 2.

Bibtex

@article{6e5f5cc09d3f4ebbab1ff2b4e2470233,
title = "Fabrication with Semiconductor Packaging Technologies and Characterization of a Large‐Scale Flexible Thermoelectric Module",
abstract = "Recently, flexible thermoelectric generator (FlexTEG) modules using organic or thin film materials have gained much attention due to their potential applications for, for example, wireless sensors and wearable power. However, the performance of these modules is poor and still far from the requirement for energy harvesting. Here, the traditional semiconductor packaging technique is adapted to fabricate a large‐scale FlexTEG, for use in energy harvesting on both planar and nonplanar surfaces. The module uses high‐performance bismuth‐telluride p‐ and n‐type chips on a flexible thin plastic substrate. Using a unique isotropic design for mounting the chips, a FlexTEG module consisting of 250 p‐n pairs is successfully fabricated on a 50 × 50 mm2 flexible substrate. The output power, mechanical strength, and bending properties are investigated at different temperature gradients and bending cycles. The module exhibits a maximum output power density of 158 mW cm−2 at dT = 105 K, corresponding to an efficiency value of 1.84{\%}, which is comparable to a conventional bulk TEG. Mechanical tests reveal that the flexible module is reliable and stable during bending. These results open great potential for applications in portable, wearable, or implantable electronic devices.",
keywords = "Bi-Te, Flexible electronics, Packaging, Solder, Thermoelectric modules",
author = "Tohru Sugahara and Yusufu Ekubaru and {Van Nong}, Ngo and Noriko Kagami and Keiichi Ohata and Hung, {Le Thanh} and Michio Okajima and Shutaro Nambu and Katsuaki Suganuma",
year = "2019",
doi = "10.1002/admt.201800556",
language = "English",
volume = "4",
journal = "Advanced Materials Technologies",
issn = "2365-709x",
publisher = "Wiley-Blackwell",
number = "2",

}

RIS

TY - JOUR

T1 - Fabrication with Semiconductor Packaging Technologies and Characterization of a Large‐Scale Flexible Thermoelectric Module

AU - Sugahara, Tohru

AU - Ekubaru, Yusufu

AU - Van Nong, Ngo

AU - Kagami, Noriko

AU - Ohata, Keiichi

AU - Hung, Le Thanh

AU - Okajima, Michio

AU - Nambu, Shutaro

AU - Suganuma, Katsuaki

PY - 2019

Y1 - 2019

N2 - Recently, flexible thermoelectric generator (FlexTEG) modules using organic or thin film materials have gained much attention due to their potential applications for, for example, wireless sensors and wearable power. However, the performance of these modules is poor and still far from the requirement for energy harvesting. Here, the traditional semiconductor packaging technique is adapted to fabricate a large‐scale FlexTEG, for use in energy harvesting on both planar and nonplanar surfaces. The module uses high‐performance bismuth‐telluride p‐ and n‐type chips on a flexible thin plastic substrate. Using a unique isotropic design for mounting the chips, a FlexTEG module consisting of 250 p‐n pairs is successfully fabricated on a 50 × 50 mm2 flexible substrate. The output power, mechanical strength, and bending properties are investigated at different temperature gradients and bending cycles. The module exhibits a maximum output power density of 158 mW cm−2 at dT = 105 K, corresponding to an efficiency value of 1.84%, which is comparable to a conventional bulk TEG. Mechanical tests reveal that the flexible module is reliable and stable during bending. These results open great potential for applications in portable, wearable, or implantable electronic devices.

AB - Recently, flexible thermoelectric generator (FlexTEG) modules using organic or thin film materials have gained much attention due to their potential applications for, for example, wireless sensors and wearable power. However, the performance of these modules is poor and still far from the requirement for energy harvesting. Here, the traditional semiconductor packaging technique is adapted to fabricate a large‐scale FlexTEG, for use in energy harvesting on both planar and nonplanar surfaces. The module uses high‐performance bismuth‐telluride p‐ and n‐type chips on a flexible thin plastic substrate. Using a unique isotropic design for mounting the chips, a FlexTEG module consisting of 250 p‐n pairs is successfully fabricated on a 50 × 50 mm2 flexible substrate. The output power, mechanical strength, and bending properties are investigated at different temperature gradients and bending cycles. The module exhibits a maximum output power density of 158 mW cm−2 at dT = 105 K, corresponding to an efficiency value of 1.84%, which is comparable to a conventional bulk TEG. Mechanical tests reveal that the flexible module is reliable and stable during bending. These results open great potential for applications in portable, wearable, or implantable electronic devices.

KW - Bi-Te

KW - Flexible electronics

KW - Packaging

KW - Solder

KW - Thermoelectric modules

U2 - 10.1002/admt.201800556

DO - 10.1002/admt.201800556

M3 - Journal article

VL - 4

JO - Advanced Materials Technologies

JF - Advanced Materials Technologies

SN - 2365-709x

IS - 2

M1 - 1800556

ER -