Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

Yiyu Ou; Ahmed Fadil; Haiyan Ou

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

358 Downloads (Pure)

Abstract

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.

Original language	English
Publication date	2015
Publication status	Published - 2015
Event	3rd European-Asian workshop on Light-Emitting Diodes - Lyngby, Denmark Duration: 5 Mar 2015 → 6 Mar 2015 Conference number: 3

Workshop

Workshop	3rd European-Asian workshop on Light-Emitting Diodes
Number	3
Country/Territory	Denmark
City	Lyngby
Period	05/03/2015 → 06/03/2015

Keywords

Light-emitting diode
Nanopillar LED
QCSE

Access to Document

2015 EALED D1Final published version, 721 KB

Cite this

@conference{e0ebaabc2f4c433d93ef6770398ad181,

title = "Fabrication of InGaN/GaN nanopillar light-emitting diode arrays",

abstract = "Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.",

keywords = "Light-emitting diode, Nanopillar LED, QCSE ",

author = "Yiyu Ou and Ahmed Fadil and Haiyan Ou",

year = "2015",

language = "English",

note = "3rd European-Asian workshop on Light-Emitting Diodes ; Conference date: 05-03-2015 Through 06-03-2015",

}

TY - ABST

T1 - Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

AU - Ou, Yiyu

AU - Fadil, Ahmed

AU - Ou, Haiyan

N1 - Conference code: 3

PY - 2015

Y1 - 2015

N2 - Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.

AB - Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.

KW - Light-emitting diode

KW - Nanopillar LED

KW - QCSE

M3 - Conference abstract for conference

T2 - 3rd European-Asian workshop on Light-Emitting Diodes

Y2 - 5 March 2015 through 6 March 2015

ER -

Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

Abstract

Workshop

Keywords

Access to Document

Fingerprint

Cite this