Fabrication of InGaN/GaN nanopillar light-emitting diode arrays

Yiyu Ou, Ahmed Fadil, Haiyan Ou

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Abstract

Nanopillar InGaN/GaN green light-emitting diode arrays were fabricated by using self-assembled nanopatterning and dry etching process. Both internal and external quantum efficiency were increased due to strain relaxation and enhanced light extraction.
Original languageEnglish
Publication date2015
Publication statusPublished - 2015
Event3rd European-Asian workshop on Light-Emitting Diodes - Lyngby, Denmark
Duration: 5 Mar 20156 Mar 2015
Conference number: 3

Workshop

Workshop3rd European-Asian workshop on Light-Emitting Diodes
Number3
CountryDenmark
CityLyngby
Period05/03/201506/03/2015

Keywords

  • Light-emitting diode
  • Nanopillar LED
  • QCSE

Cite this

Ou, Y., Fadil, A., & Ou, H. (2015). Fabrication of InGaN/GaN nanopillar light-emitting diode arrays. Abstract from 3rd European-Asian workshop on Light-Emitting Diodes, Lyngby, Denmark.