Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

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Abstract

Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to
surface state produced during the anodic etching.
Original languageEnglish
JournalOptical Materials Express
Volume6
Issue number6
Pages (from-to)1956-1963
ISSN2159-3930
DOIs
Publication statusPublished - 2016

Cite this

@article{749cdb3586144110b97467448ec16ede,
title = "Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films",
abstract = "Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed tosurface state produced during the anodic etching.",
author = "Weifang Lu and Yiyu Ou and Petersen, {Paul Michael} and Haiyan Ou",
year = "2016",
doi = "10.1364/OME.6.001956",
language = "English",
volume = "6",
pages = "1956--1963",
journal = "Optical Materials Express",
issn = "2159-3930",
publisher = "Optical Society of America",
number = "6",

}

Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films. / Lu, Weifang; Ou, Yiyu; Petersen, Paul Michael; Ou, Haiyan.

In: Optical Materials Express, Vol. 6, No. 6, 2016, p. 1956-1963.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

AU - Lu, Weifang

AU - Ou, Yiyu

AU - Petersen, Paul Michael

AU - Ou, Haiyan

PY - 2016

Y1 - 2016

N2 - Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed tosurface state produced during the anodic etching.

AB - Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed tosurface state produced during the anodic etching.

U2 - 10.1364/OME.6.001956

DO - 10.1364/OME.6.001956

M3 - Journal article

VL - 6

SP - 1956

EP - 1963

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 6

ER -