Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

Research output: Contribution to journalJournal article – Annual report year: 2015Researchpeer-review

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Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography. / Fadil, Ahmed; Ou, Yiyu; Zhan, Teng; Wu, Kaiyu; Suyatin, Dmitry B.; Lu, Weifang; Petersen, Paul Michael; Liu, Zhiqiang; Ou, Haiyan.

In: Journal of Nanophotonics, Vol. 9, 093062, 2015.

Research output: Contribution to journalJournal article – Annual report year: 2015Researchpeer-review

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@article{2121c179382246d79a202a51ab23a624,
title = "Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography",
abstract = "Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.",
keywords = "Light-emitting diodes, Gallium nitride, Nanopillar, Damage treatment",
author = "Ahmed Fadil and Yiyu Ou and Teng Zhan and Kaiyu Wu and Suyatin, {Dmitry B.} and Weifang Lu and Petersen, {Paul Michael} and Zhiqiang Liu and Haiyan Ou",
year = "2015",
doi = "10.1117/1.JNP.9.093062",
language = "English",
volume = "9",
journal = "Journal of Nanophotonics",
issn = "1934-2608",
publisher = "S P I E - International Society for Optical Engineering",

}

RIS

TY - JOUR

T1 - Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Zhan, Teng

AU - Wu, Kaiyu

AU - Suyatin, Dmitry B.

AU - Lu, Weifang

AU - Petersen, Paul Michael

AU - Liu, Zhiqiang

AU - Ou, Haiyan

PY - 2015

Y1 - 2015

N2 - Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.

AB - Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.

KW - Light-emitting diodes

KW - Gallium nitride

KW - Nanopillar

KW - Damage treatment

U2 - 10.1117/1.JNP.9.093062

DO - 10.1117/1.JNP.9.093062

M3 - Journal article

VL - 9

JO - Journal of Nanophotonics

JF - Journal of Nanophotonics

SN - 1934-2608

M1 - 093062

ER -