Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

Ahmed Fadil; Yiyu Ou; Teng Zhan; Kaiyu Wu; Dmitry B. Suyatin; Weifang Lu; Paul Michael Petersen; Zhiqiang Liu; Haiyan Ou

doi:10.1117/1.JNP.9.093062

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

Ahmed Fadil, Yiyu Ou, Teng Zhan, Kaiyu Wu, Dmitry B. Suyatin, Weifang Lu, Paul Michael Petersen, Zhiqiang Liu, Haiyan Ou

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.

Original language	English
Article number	093062
Journal	Journal of Nanophotonics
Volume	9
Number of pages	9
ISSN	1934-2608
DOIs	https://doi.org/10.1117/1.JNP.9.093062
Publication status	Published - 2015

Keywords

Light-emitting diodes
Gallium nitride
Nanopillar
Damage treatment

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10.1117/1.JNP.9.093062

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title = "Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography",

abstract = "Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.",

keywords = "Light-emitting diodes, Gallium nitride, Nanopillar, Damage treatment",

author = "Ahmed Fadil and Yiyu Ou and Teng Zhan and Kaiyu Wu and Suyatin, {Dmitry B.} and Weifang Lu and Petersen, {Paul Michael} and Zhiqiang Liu and Haiyan Ou",

year = "2015",

doi = "10.1117/1.JNP.9.093062",

language = "English",

volume = "9",

journal = "Journal of Nanophotonics",

issn = "1934-2608",

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TY - JOUR

T1 - Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Zhan, Teng

AU - Wu, Kaiyu

AU - Suyatin, Dmitry B.

AU - Lu, Weifang

AU - Petersen, Paul Michael

AU - Liu, Zhiqiang

AU - Ou, Haiyan

PY - 2015

Y1 - 2015

N2 - Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.

AB - Surface-patterning technologies have enabled the improvement of currently existinglight-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency ofgreen GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars onInGaN∕GaN quantum-well LEDs. By etching through the active region, it is possible to improveboth the light extraction efficiency and, in addition, the internal quantum efficiency through theeffects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed usingRaman spectroscopy. We have shown that nanopillar LEDs can be significantly improved byapplying a combination of ion-damage curing techniques, including thermal and acidic treatment,and have analyzed their effects using x-ray photoelectron spectroscopy.

KW - Light-emitting diodes

KW - Gallium nitride

KW - Nanopillar

KW - Damage treatment

U2 - 10.1117/1.JNP.9.093062

DO - 10.1117/1.JNP.9.093062

M3 - Journal article

SN - 1934-2608

VL - 9

JO - Journal of Nanophotonics

JF - Journal of Nanophotonics

M1 - 093062

ER -

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography

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Keywords

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