Abstract
Development of ultra-small and efficient laser sources for photonic integrated circuits is one of the main cornerstones in achieving the requirements imposed for on-chip optical interconnects [1]. The InP photonic crystal (PhC) platform with selectively embedded gain medium [2] is a promising way of separating active light amplification regions from passive regions for light propagation without induced absorption losses and surface recombination. The main focus of this work is the fabrication and experimental demonstration of a buried heterostructure (BH) photonic crystal laser bonded to a silicon wafer, illustrating the effective single-platform active-passive material integration method.
Original language | English |
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Title of host publication | 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference |
Number of pages | 1 |
Publisher | IEEE |
Publication date | 2017 |
Pages | 1-1 |
ISBN (Print) | 9781509067367 |
DOIs | |
Publication status | Published - 2017 |
Event | The 2017 European Conference on Lasers and Electro-Optics - Munich, Germany Duration: 25 Jun 2017 → 29 Jun 2017 http://www.cleoeurope.org/ |
Conference
Conference | The 2017 European Conference on Lasers and Electro-Optics |
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Country/Territory | Germany |
City | Munich |
Period | 25/06/2017 → 29/06/2017 |
Internet address |
Keywords
- Photonic crystals
- Indium phosphide
- III-V semiconductor materials
- Cavity resonators
- Fabrication
- Quantum dot lasers