Externally pumped millimeter-wave Josephson-junction parametric amplifier

M.T Levinsen; Niels Falsig Pedersen; Ole Sørensen; Benny Dueholm; Jesper Mygind

doi:10.1109/T-ED.1980.20130

Externally pumped millimeter-wave Josephson-junction parametric amplifier

M.T Levinsen, Niels Falsig Pedersen, Ole Sørensen, Benny Dueholm, Jesper Mygind

Department of Physics

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

A unified theory of the singly and doubly degenerate Josephson-junction parametric amplifier is presented. Experiments with single junctions on both amplifier modes at frequencies 10, 35, and 70 GHz are discussed. Low-noise temperature (∼100 K, single sideband (SSB)) and reasonable gain (∼8 dB) were obtained at 35 GHz in the singly degenerate mode. On the basis of the theory and experiments, a general procedure for optimizing junction parameters is discussed and illustrated by the specific design of a 100-GHz amplifier.

Original language	English
Journal	I E E E Transactions on Electron Devices
Volume	27
Issue number	10
Pages (from-to)	1928-1934
ISSN	0018-9383
DOIs	https://doi.org/10.1109/T-ED.1980.20130
Publication status	Published - 1980

Bibliographical note

Copyright 1980 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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10.1109/T-ED.1980.20130

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title = "Externally pumped millimeter-wave Josephson-junction parametric amplifier",

abstract = "A unified theory of the singly and doubly degenerate Josephson-junction parametric amplifier is presented. Experiments with single junctions on both amplifier modes at frequencies 10, 35, and 70 GHz are discussed. Low-noise temperature (∼100 K, single sideband (SSB)) and reasonable gain (∼8 dB) were obtained at 35 GHz in the singly degenerate mode. On the basis of the theory and experiments, a general procedure for optimizing junction parameters is discussed and illustrated by the specific design of a 100-GHz amplifier.",

author = "M.T Levinsen and Pedersen, {Niels Falsig} and Ole S{\o}rensen and Benny Dueholm and Jesper Mygind",

note = "Copyright 1980 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",

year = "1980",

doi = "10.1109/T-ED.1980.20130",

language = "English",

volume = "27",

pages = "1928--1934",

journal = "I E E E Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Externally pumped millimeter-wave Josephson-junction parametric amplifier

AU - Levinsen, M.T

AU - Pedersen, Niels Falsig

AU - Sørensen, Ole

AU - Dueholm, Benny

AU - Mygind, Jesper

N1 - Copyright 1980 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 1980

Y1 - 1980

N2 - A unified theory of the singly and doubly degenerate Josephson-junction parametric amplifier is presented. Experiments with single junctions on both amplifier modes at frequencies 10, 35, and 70 GHz are discussed. Low-noise temperature (∼100 K, single sideband (SSB)) and reasonable gain (∼8 dB) were obtained at 35 GHz in the singly degenerate mode. On the basis of the theory and experiments, a general procedure for optimizing junction parameters is discussed and illustrated by the specific design of a 100-GHz amplifier.

AB - A unified theory of the singly and doubly degenerate Josephson-junction parametric amplifier is presented. Experiments with single junctions on both amplifier modes at frequencies 10, 35, and 70 GHz are discussed. Low-noise temperature (∼100 K, single sideband (SSB)) and reasonable gain (∼8 dB) were obtained at 35 GHz in the singly degenerate mode. On the basis of the theory and experiments, a general procedure for optimizing junction parameters is discussed and illustrated by the specific design of a 100-GHz amplifier.

U2 - 10.1109/T-ED.1980.20130

DO - 10.1109/T-ED.1980.20130

M3 - Journal article

VL - 27

SP - 1928

EP - 1934

JO - I E E E Transactions on Electron Devices

JF - I E E E Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -