Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

David Cooper, Pierrette Rivallin, Jean-Michel Hartmann, Amal Chabli, Rafal E. Dunin-Borkowski

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    Abstract

    Silicon specimens containing p-n junctions have been prepared for examination by off-axis electron holography using focused ion beam (FIB) milling. FIB milling modifies the surfaces of the specimens due to gallium implantation and the creation of defects which has the effect of reducing the active dopant concentration measured during electrical characterization. Here we show that although this damage can be removed by using low temperature annealing, the presence of surface charge will modify the electrical potentials in the specimens and limit the dopant concentration that can be measured. (C) 2009 American Institute of Physics. [doi:10.1063/1.3195088]
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume106
    Issue number6
    Pages (from-to)064506
    ISSN0021-8979
    DOIs
    Publication statusPublished - 2009

    Bibliographical note

    Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • PROFILE
    • DAMAGE
    • MICROSCOPY

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