Exploiting Flexible Memristors Based on Solution-Processed Colloidal CuInSe2 Nanocrystals

Compared to analogous bulk materials, colloidal nanocrystals have presented a powerful platform for building up electronic devices on the nano/micrometer scale and flexible portable electronic apparatus with the benefits of solution‐based processing approach at room temperature. Herein, memristors based on CuInSe2 (CISe) colloidal nanocrystals prepared using a solution‐based process at room temperature are constructed. The memristors exhibit obvious bipolar resistive switching performance with a high–low resistance ratio larger than 5.7 and a steady retention time over 104 s. This is attributed to the copper ion redox reaction and the migration of these ions under an applied electric field. When the SET voltage is reached, the ions are separated from one of the electrodes, and the memristor changes from a low‐resistance state (LRS) to a high‐resistance state (HRS). Conversely, when the voltage reaches the RESET voltage, the memristor switches from a HRS to a LRS. In addition, the flexible memristor can be fabricated by spincoating nanocrystal solution onto polyethylene terephthalate (PET) at room temperature, showing excellent reproducibility of the performance including 100 times of continuous operation, 104 s of reproducible reading, 600 times of antifatigue testing, and thermal stability up to 95 °C. The flexible devices demonstrate promising applications for portable electronic devices.