Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

F. Gindele; Ulrike Woggon; Wolfgang Werner Langbein; Jørn Märcher Hvam; K. Leonhardi; D. Hommel; H. Selke

doi:10.1103/PhysRevB.60.8773

Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

F. Gindele, Ulrike Woggon, Wolfgang Werner Langbein, Jørn Märcher Hvam, K. Leonhardi, D. Hommel, H. Selke

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Abstract

The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1-xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature.

Original language	English
Journal	Physical Review B
Volume	60
Issue number	12
Pages (from-to)	8773-8782
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.60.8773
Publication status	Published - 1999

Bibliographical note

Copyright (1999) by the American Physical Society.

Keywords

DOT STRUCTURES
PHOTOLUMINESCENCE
SPECTROSCOPY
WELL STRUCTURES
OPTICAL INVESTIGATIONS
LOCALIZED EXCITONS
SOLID-SOLUTIONS
SEMICONDUCTOR NANOCRYSTALS
GAIN
ZNSE MATRIX

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@article{3ae4cf6a78774b3c965f8addbbdd147e,

title = "Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures",

abstract = "The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1-xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature.",

keywords = "DOT STRUCTURES, PHOTOLUMINESCENCE, SPECTROSCOPY, WELL STRUCTURES, OPTICAL INVESTIGATIONS, LOCALIZED EXCITONS, SOLID-SOLUTIONS, SEMICONDUCTOR NANOCRYSTALS, GAIN, ZNSE MATRIX",

author = "F. Gindele and Ulrike Woggon and Langbein, {Wolfgang Werner} and Hvam, {J{\o}rn M{\"a}rcher} and K. Leonhardi and D. Hommel and H. Selke",

note = "Copyright (1999) by the American Physical Society.",

year = "1999",

doi = "10.1103/PhysRevB.60.8773",

language = "English",

volume = "60",

pages = "8773--8782",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

TY - JOUR

T1 - Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures

AU - Gindele, F.

AU - Woggon, Ulrike

AU - Langbein, Wolfgang Werner

AU - Hvam, Jørn Märcher

AU - Leonhardi, K.

AU - Hommel, D.

AU - Selke, H.

N1 - Copyright (1999) by the American Physical Society.

PY - 1999

Y1 - 1999

N2 - The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1-xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature.

AB - The optical properties of CdSe nanostructures grown by migration-enhanced epitaxy of CdSe on ZnSe are studied by time-, energy-, and temperature-dependent photoluminescence and excitation spectroscopy, as well as by polarization-dependent four-wave mixing and two-photon absorption experiments. The nanostructures consist of a coherently strained Zn1-xCdxSe/ZnSe quantum well with embedded islands of higher Cd content with sizes of a few nanometer due to strain-induced CdSe accumulation. The local increase in CdSe concentration results in a strong localization of the excitonic wave function, in an increase in radiative lifetime, and a decrease of the dephasing rate. Local LO-phonon modes caused by the strong modulation of the Cd concentration profile are found in phonon-assisted relaxation processes. Confined biexcitons with large binding energies between 20 and 24 meV are observed, indicating the important role of biexcitons even at room temperature.

KW - DOT STRUCTURES

KW - PHOTOLUMINESCENCE

KW - SPECTROSCOPY

KW - WELL STRUCTURES

KW - OPTICAL INVESTIGATIONS

KW - LOCALIZED EXCITONS

KW - SOLID-SOLUTIONS

KW - SEMICONDUCTOR NANOCRYSTALS

KW - GAIN

KW - ZNSE MATRIX

U2 - 10.1103/PhysRevB.60.8773

DO - 10.1103/PhysRevB.60.8773

M3 - Journal article

VL - 60

SP - 8773

EP - 8782

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 12

ER -