Excitonic optical nonlinearities and transport in the layered compound semiconductor GaSe

V. Mizeikis, Lyssenko Vadim, John Erland Østergaard, Jørn Märcher Hvam

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    Abstract

    Dephasing and transient grating experiments in the direct excitonic absorption region of GaSe at low temperatures show that a fast relaxation within the one-dimensionally disordered excitonic band results in band filling being the dominant mechanism of the optical nonlinearity. Correspondingly, we observe a blueshift of the nonlinear signal with excitation density. The temperature dependence of the exciton diffusion constant measured in directions parallel to the GaSe layer planes indicates that temperature-independent scattering (trapping) and scattering by acoustic phonons determine the exciton mobility at low temperatures.
    Original languageEnglish
    JournalPhysical Review B
    Volume51
    Issue number23
    Pages (from-to)16651-16659
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1995

    Bibliographical note

    Copyright (1995) by the American Physical Society.

    Keywords

    • CDS1-XSEX
    • CDSE
    • DIFFUSION
    • SCATTERING
    • QUANTUM-WELLS
    • DYNAMICS
    • STACKING DISORDER

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