Exciton ionization in multilayer transition-metal dichalcogenides

Thomas Garm Pedersen, Simone Latini, Kristian Sommer Thygesen, Héctor Mera, Branislav K. Nikolić

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Abstract

Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model incorporating fully the pronounced anisotropy of these materials. Using complex scaling, we show that the field-dependence of the ionization process is strongly dependent on orientation. Also, we find that direct and indirect excitons behave qualitatively differently as a result of opposite effective anisotropy of these states. Based on first-principles material parameters, an analysis of several important TMDs reveals WSe2 and MoSe2 to be superior for applications relying on ionization of direct and indirect excitons, respectively.
Original languageEnglish
Article number073043
JournalNew Journal of Physics
Volume18
Issue number7
Number of pages10
ISSN1367-2630
DOIs
Publication statusPublished - 2016

Keywords

  • Transition-metal dichalcogenides
  • Exciton ionization
  • Mott-wannier excitons

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