Exciton Formation in Disordered Semiconductors

A. Klochikhin, A. Reznitsky, S. Permogorov, V. G. Lyssenko, T. Breitkopf, Claus Klingshirn, Jørn Märcher Hvam, David Gershoni (Editor)

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Stationary luminescence spectra of disordered solid solutions can be accounted by the model of localized excitons. Detailed analysis of the long time decay kinetics of luminescence shows that exciton formation in these systems is in great extent due to the bimolecular reaction of separated carrier pairs.
Original languageEnglish
Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
Place of PublicationSingapore
PublisherWorld Scientific
Publication date1999
Publication statusPublished - 1999
Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
Duration: 2 Aug 19987 Aug 1998
Conference number: 24
http://physics.technion.ac.il/~icps24/

Conference

Conference24th International Conference on The Physics of Semiconductors
Number24
Country/TerritoryIsrael
CityJerusalem
Period02/08/199807/08/1998
Internet address

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