Exciton Formation in Disordered Semiconductors

A. Klochikhin; A. Reznitsky; S. Permogorov; V. G. Lyssenko; T. Breitkopf; Claus Klingshirn; Jørn Märcher Hvam; David Gershoni

Exciton Formation in Disordered Semiconductors

A. Klochikhin, A. Reznitsky, S. Permogorov, V. G. Lyssenko, T. Breitkopf, Claus Klingshirn, Jørn Märcher Hvam, David Gershoni (Editor)

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Stationary luminescence spectra of disordered solid solutions can be accounted by the model of localized excitons. Detailed analysis of the long time decay kinetics of luminescence shows that exciton formation in these systems is in great extent due to the bimolecular reaction of separated carrier pairs.

Original language	English
Title of host publication	Proceedings of the 24th International Conference on The Physics of Semiconductors
Place of Publication	Singapore
Publisher	World Scientific
Publication date	1999
Publication status	Published - 1999
Event	24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/

Conference

Conference	24th International Conference on The Physics of Semiconductors
Number	24
Country/Territory	Israel
City	Jerusalem
Period	02/08/1998 → 07/08/1998
Internet address	http://physics.technion.ac.il/~icps24/

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title = "Exciton Formation in Disordered Semiconductors",

abstract = "Stationary luminescence spectra of disordered solid solutions can be accounted by the model of localized excitons. Detailed analysis of the long time decay kinetics of luminescence shows that exciton formation in these systems is in great extent due to the bimolecular reaction of separated carrier pairs.",

author = "A. Klochikhin and A. Reznitsky and S. Permogorov and Lyssenko, {V. G.} and T. Breitkopf and Claus Klingshirn and Hvam, {J{\o}rn M{\"a}rcher} and David Gershoni",

year = "1999",

language = "English",

booktitle = "Proceedings of the 24th International Conference on The Physics of Semiconductors",

publisher = "World Scientific",

address = "Singapore",

note = "24th International Conference on The Physics of Semiconductors, ICPS 24 ; Conference date: 02-08-1998 Through 07-08-1998",

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Klochikhin, A, Reznitsky, A, Permogorov, S, Lyssenko, VG, Breitkopf, T, Klingshirn, C, Hvam, JM & Gershoni, D (ed.) 1999, Exciton Formation in Disordered Semiconductors. in Proceedings of the 24th International Conference on The Physics of Semiconductors. World Scientific, Singapore, 24th International Conference on The Physics of Semiconductors, Jerusalem, Israel, 02/08/1998.

TY - GEN

T1 - Exciton Formation in Disordered Semiconductors

AU - Klochikhin, A.

AU - Reznitsky, A.

AU - Permogorov, S.

AU - Lyssenko, V. G.

AU - Breitkopf, T.

AU - Klingshirn, Claus

AU - Hvam, Jørn Märcher

A2 - Gershoni, David

N1 - Conference code: 24

PY - 1999

Y1 - 1999

N2 - Stationary luminescence spectra of disordered solid solutions can be accounted by the model of localized excitons. Detailed analysis of the long time decay kinetics of luminescence shows that exciton formation in these systems is in great extent due to the bimolecular reaction of separated carrier pairs.

AB - Stationary luminescence spectra of disordered solid solutions can be accounted by the model of localized excitons. Detailed analysis of the long time decay kinetics of luminescence shows that exciton formation in these systems is in great extent due to the bimolecular reaction of separated carrier pairs.

M3 - Article in proceedings

BT - Proceedings of the 24th International Conference on The Physics of Semiconductors

PB - World Scientific

CY - Singapore

T2 - 24th International Conference on The Physics of Semiconductors

Y2 - 2 August 1998 through 7 August 1998

ER -