Exciton formation and relaxation in GaAs epilayers

M. Gurioli, Paola Borri, M. Colocci, Wolfgang Werner Langbein, Jørn Märcher Hvam, E. Molinari, P. Selbmann, P. Lugli

    Research output: Contribution to journalJournal articleResearchpeer-review

    Original languageEnglish
    JournalPhysical Review B
    Volume58
    Issue number20
    Pages (from-to)R13403-6
    ISSN2469-9950
    Publication statusPublished - 1998

    Cite this

    Gurioli, M., Borri, P., Colocci, M., Langbein, W. W., Hvam, J. M., Molinari, E., Selbmann, P., & Lugli, P. (1998). Exciton formation and relaxation in GaAs epilayers. Physical Review B, 58(20), R13403-6.