Exciton dephasing in ZnSe quantum wires

Hans Peter Wagner, Wolfgang Werner Langbein, Jørn Märcher Hvam, G. Bacher, T. Kümmell, A. Forchel

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    Abstract

    The homogeneous linewidths of excitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm are studied by transient four-wave mixing. The low-density dephasing time is found to increase with decreasing wire width. This is attributed mainly to a reduction of electron-exciton scattering within the wire due to the electron trapping in surface states and exciton localization. The exciton-exciton scattering efficiency, determined by the density dependence of the exciton dephasing, is found to increase with decreasing win width. This is assigned to the reduced phase space in a quasi-one-dimensional system, enhancing the repulsive interaction between excitons due to Pauli blocking.
    Original languageEnglish
    JournalPhysical Review B
    Volume57
    Issue number3
    Pages (from-to)1797-1800
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1998

    Bibliographical note

    Copyright (1998) by the American Physical Society.

    Keywords

    • SEMICONDUCTORS
    • RELAXATION
    • SHIFT
    • CDSE
    • SCATTERING
    • WELLS
    • ROOM-TEMPERATURE
    • BEATS
    • FEMTOSECOND COHERENT SPECTROSCOPY
    • EMISSION

    Cite this

    Wagner, H. P., Langbein, W. W., Hvam, J. M., Bacher, G., Kümmell, T., & Forchel, A. (1998). Exciton dephasing in ZnSe quantum wires. Physical Review B, 57(3), 1797-1800. https://doi.org/10.1103/PhysRevB.57.1797