Exciton dephasing in single InGaAs quantum dots

Kristjan Leosson, John Erland Østergaard, Jacob Riis Jensen, Jørn Märcher Hvam

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The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states. The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots.
Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Place of PublicationSan Francisco, USA
Publication date2000
ISBN (Print)1-55752-608-7
Publication statusPublished - 2000
Event2000 Quantum Electronics and Laser Science Conference - San Francisco, CA, United States
Duration: 7 May 200011 May 2000


Conference2000 Quantum Electronics and Laser Science Conference
Country/TerritoryUnited States
CitySan Francisco, CA
Internet address

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