Exciton dephasing in single InGaAs quantum dots

Kristjan Leosson, John Erland Østergaard, Jacob Riis Jensen, Jørn Märcher Hvam

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Abstract

The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states. The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots.
Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Place of PublicationSan Francisco, USA
Publication date2000
Pages56-57
ISBN (Print)1-55752-608-7
Publication statusPublished - 2000
Event2000 Quantum Electronics and Laser Science Conference - San Francisco, CA, United States
Duration: 7 May 200011 May 2000
http://www.opticsinfobase.org/search.cfm?meetingid=19&year=2000

Conference

Conference2000 Quantum Electronics and Laser Science Conference
Country/TerritoryUnited States
CitySan Francisco, CA
Period07/05/200011/05/2000
Internet address

Bibliographical note

Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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