Excitation power dependence of the photoluminescence emission in 6H silicon carbide

A.T. Tarekegne, H. Ou

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

Original language	English
Publication date	2019
Number of pages	2
Publication status	Published - 2019
Event	International Conference on Silicon Carbide and Related Materials 2019 - Kyoto International Conference Center, Kyoto, Japan Duration: 29 Sept 2019 → 4 Oct 2019 Conference number: 18 https://www.icscrm2019.org/

Conference	International Conference on Silicon Carbide and Related Materials 2019
Number	18
Location	Kyoto International Conference Center
Country/Territory	Japan
City	Kyoto
Period	29/09/2019 → 04/10/2019
Internet address	https://www.icscrm2019.org/

OpenUrl availability

@conference{b885ed570b6648b6bd57deb57144730f,

title = "Excitation power dependence of the photoluminescence emission in 6H silicon carbide",

author = "A.T. Tarekegne and H. Ou",

year = "2019",

language = "English",

note = "International Conference on Silicon Carbide and Related Materials 2019, ICSCRM2019 ; Conference date: 29-09-2019 Through 04-10-2019",

url = "https://www.icscrm2019.org/",

}