Excitation power dependence of the photoluminescence emission in 6H silicon carbide

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

Original languageEnglish
Publication date2019
Number of pages2
Publication statusPublished - 2019
EventInternational Conference on Silicon Carbide and Related Materials 2019 - Kyoto International Conference Center, Kyoto, Japan
Duration: 29 Sep 20194 Oct 2019
Conference number: 18
https://www.icscrm2019.org/

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2019
Number18
LocationKyoto International Conference Center
CountryJapan
CityKyoto
Period29/09/201904/10/2019
Internet address

Cite this

Tarekegne, A. T., & Ou, H. (2019). Excitation power dependence of the photoluminescence emission in 6H silicon carbide. Abstract from International Conference on Silicon Carbide and Related Materials 2019, Kyoto, Japan.