TY - JOUR
T1 - Evidencing Dissipation Dilution in Large-Scale Arrays of Single-Layer WSe2 Mechanical Resonators
AU - Pitts, Michael
AU - Feuer, Matthew
AU - Tan, Anthony K.C.
AU - Montblanch, Alejandro R.P.
AU - Kerfoot, James
AU - Alexeev, Evgeny M.
AU - Högen, Michael
AU - Hays, Patrick
AU - Tongay, Seth A.
AU - Ferrari, Andrea C.
AU - Atatüre, Mete
AU - Kara, Dhiren M.
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024
Y1 - 2024
N2 - Micromechanical resonators with very low mass are highly desirable for sensing and transduction applications. Layered materials (LMs) can be used to fabricate single- to few-atom thick suspended membranes, representing the ultimate limit to low mass. Transition-metal dichalcogenides (TMDs), such as WSe2, are particularly compelling because they can host spatially confined excitons in single layer (1L), potentially enabling the creation of nonclassical mechanical states and interconnects between quantum networks and processors. However, these exciting prospects have been tempered by low device yields, invasive methods for detecting resonator motion, and high mechanical damping. Here, we report the creation of mechanical resonators by suspending 1L-WSe2 across a 90 × 90 array of 2.5-μm diameter holes with a > 75% success rate. We detect the resonator room-temperature (RT) Brownian motion and measure resonator mass to quantify contamination, using below-bandgap laser interferometry. We investigate the relation between frequency, diameter, and mechanical quality factor, which can exceed 1000 in our devices. We find the dependence agrees with the effect of dissipation dilution, highlighting the importance of reducing mechanical mode-bending. Key to this is the large-scale, high-quality arrays that make it possible to access a frequency range that surpasses previous works. Further, the ability to fabricate large numbers of 1L resonators, and the simplicity of probing their motion without electrodes or an underlying reflective substrate, facilitates previously hard-to-reach configurations, such as resonators in phononic crystals or within optical cavities.
AB - Micromechanical resonators with very low mass are highly desirable for sensing and transduction applications. Layered materials (LMs) can be used to fabricate single- to few-atom thick suspended membranes, representing the ultimate limit to low mass. Transition-metal dichalcogenides (TMDs), such as WSe2, are particularly compelling because they can host spatially confined excitons in single layer (1L), potentially enabling the creation of nonclassical mechanical states and interconnects between quantum networks and processors. However, these exciting prospects have been tempered by low device yields, invasive methods for detecting resonator motion, and high mechanical damping. Here, we report the creation of mechanical resonators by suspending 1L-WSe2 across a 90 × 90 array of 2.5-μm diameter holes with a > 75% success rate. We detect the resonator room-temperature (RT) Brownian motion and measure resonator mass to quantify contamination, using below-bandgap laser interferometry. We investigate the relation between frequency, diameter, and mechanical quality factor, which can exceed 1000 in our devices. We find the dependence agrees with the effect of dissipation dilution, highlighting the importance of reducing mechanical mode-bending. Key to this is the large-scale, high-quality arrays that make it possible to access a frequency range that surpasses previous works. Further, the ability to fabricate large numbers of 1L resonators, and the simplicity of probing their motion without electrodes or an underlying reflective substrate, facilitates previously hard-to-reach configurations, such as resonators in phononic crystals or within optical cavities.
KW - Dissipation dilution
KW - Layered materials
KW - Mechanical resonators
KW - Quality factor
KW - Transition-metal dichalcogenide
KW - WSe
U2 - 10.1021/acsaelm.4c01261
DO - 10.1021/acsaelm.4c01261
M3 - Journal article
AN - SCOPUS:85209553480
SN - 2637-6113
VL - 6
SP - 7898
EP - 7905
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 11
ER -