Evidence for lattice-polarization-enhanced field effects at the SrTiO3-based heterointerface

Y. Li, H. R. Zhang, Y. Lei, Y. Chen, N. Pryds, Baogen Shen, Jirong Sun

Research output: Contribution to journalJournal articleResearchpeer-review

435 Downloads (Pure)


Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensionalelectron liquid between two insulating oxides. For the LaAlO3/SrTiO3 (LAO/STO) interface, suchgating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneousapplication of gate field and illumination light. Herein, by monitoring the discharging process uponremoving the gate field, we give firm evidence for the occurrence of this lattice polarization at theamorphous-LaAlO3/SrTiO3 interface. Moreover, we find that the lattice polarization is accompaniedwith a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarizationprocess by accelerating the field-induced lattice expansion. The present work demonstrates the greatpotential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.
Original languageEnglish
Article number22418
JournalScientific Reports
Number of pages6
Publication statusPublished - 2016

Bibliographical note

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/


Dive into the research topics of 'Evidence for lattice-polarization-enhanced field effects at the SrTiO3-based heterointerface'. Together they form a unique fingerprint.

Cite this