Evidence for lattice-polarization-enhanced field effects at the SrTiO3-based heterointerface

Y. Li; H. R. Zhang; Y.  Lei; Y. Chen; N. Pryds; Baogen Shen; Jirong Sun

doi:10.1038/srep22418

Evidence for lattice-polarization-enhanced field effects at the SrTiO₃-based heterointerface

Y. Li, H. R. Zhang, Y. Lei, Y. Chen, N. Pryds, Baogen Shen, Jirong Sun

Department of Energy Conversion and Storage

Chinese Academy of Sciences

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Abstract

Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensionalelectron liquid between two insulating oxides. For the LaAlO₃/SrTiO₃ (LAO/STO) interface, suchgating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneousapplication of gate field and illumination light. Herein, by monitoring the discharging process uponremoving the gate field, we give firm evidence for the occurrence of this lattice polarization at theamorphous-LaAlO₃/SrTiO₃ interface. Moreover, we find that the lattice polarization is accompaniedwith a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarizationprocess by accelerating the field-induced lattice expansion. The present work demonstrates the greatpotential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.

Original language	English
Article number	22418
Journal	Scientific Reports
Volume	6
Number of pages	6
ISSN	2045-2322
DOIs	https://doi.org/10.1038/srep22418
Publication status	Published - 2016

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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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title = "Evidence for lattice-polarization-enhanced field effects at the SrTiO3-based heterointerface",

abstract = "Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensionalelectron liquid between two insulating oxides. For the LaAlO3/SrTiO3 (LAO/STO) interface, suchgating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneousapplication of gate field and illumination light. Herein, by monitoring the discharging process uponremoving the gate field, we give firm evidence for the occurrence of this lattice polarization at theamorphous-LaAlO3/SrTiO3 interface. Moreover, we find that the lattice polarization is accompaniedwith a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarizationprocess by accelerating the field-induced lattice expansion. The present work demonstrates the greatpotential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.",

author = "Y. Li and {R. Zhang}, H. and Y. Lei and Y. Chen and N. Pryds and Baogen Shen and Jirong Sun",

note = "This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article{\textquoteright}s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/",

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AU - Li, Y.

AU - R. Zhang, H.

AU - Lei, Y.

AU - Chen, Y.

AU - Pryds, N.

AU - Shen, Baogen

AU - Sun, Jirong

N1 - This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

PY - 2016

Y1 - 2016

N2 - Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensionalelectron liquid between two insulating oxides. For the LaAlO3/SrTiO3 (LAO/STO) interface, suchgating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneousapplication of gate field and illumination light. Herein, by monitoring the discharging process uponremoving the gate field, we give firm evidence for the occurrence of this lattice polarization at theamorphous-LaAlO3/SrTiO3 interface. Moreover, we find that the lattice polarization is accompaniedwith a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarizationprocess by accelerating the field-induced lattice expansion. The present work demonstrates the greatpotential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.

AB - Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensionalelectron liquid between two insulating oxides. For the LaAlO3/SrTiO3 (LAO/STO) interface, suchgating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneousapplication of gate field and illumination light. Herein, by monitoring the discharging process uponremoving the gate field, we give firm evidence for the occurrence of this lattice polarization at theamorphous-LaAlO3/SrTiO3 interface. Moreover, we find that the lattice polarization is accompaniedwith a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarizationprocess by accelerating the field-induced lattice expansion. The present work demonstrates the greatpotential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.

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