Evaluation of custom-designed lateral power transistors in a silicon-on-insulator process in a synchronous buck converter

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Most of todays power converters are based on power semiconductors, which are built in vertical power semiconductor processes. These devices result in limited packaging possibilities, which lead to physically long galvanic connections and therefore high external electromagnetic fields. These fields compromise power quality significantly. Therefore this paper examines the possibility to use lateral silicon-on-insulator power MOSFETs and uses the custom-made devices in a 48 V to 12 V synchronous buck converter in continuous conduction mode. The converter is designed based on custom made power transistors, implemented and verified by experimental results. The resulting efficiency of the 1 W converter is around 93 % across a wide load range and its temperature rise is less the 10 ◦C. This leads to the conclusion, that modern lateral silicon-on-insulator power processes allow high integration of power stages and therefore promise lower emissions, leading to higher power quality.
Original languageEnglish
JournalRenewable Energy and Power Quality Journal
Issue number16
Number of pages6
Publication statusPublished - 2018
EventInternational Conference on Renewable Energies and Power Quality (ICREPQ’18) - Salamanca, Spain
Duration: 21 Mar 201823 Mar 2018


ConferenceInternational Conference on Renewable Energies and Power Quality (ICREPQ’18)

    Research areas

  • Power Semiconductors, Vertical semiconductor process, Lateral semiconductor process, Silicon-on-insulator process, Buck converter

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