Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

T. Mårtensson; J. B. Wagner; E. Hilner; A. Mikkelsen; C. Thelander; J. Stangl; B. J. Ohlsson; A. Gustafsson; E. Lundgren; L. Samuelson; W. Seifert

doi:10.1002/adma.200700285

Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

T. Mårtensson, J. B. Wagner, E. Hilner, A. Mikkelsen, C. Thelander, J. Stangl, B. J. Ohlsson, A. Gustafsson, E. Lundgren, L. Samuelson, W. Seifert

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

Original language	English
Journal	Advanced Materials
Volume	19
Issue number	14
Pages (from-to)	1801-1806
Number of pages	6
ISSN	0935-9648
DOIs	https://doi.org/10.1002/adma.200700285
Publication status	Published - 2007
Externally published	Yes

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Mårtensson, T., Wagner, J. B., Hilner, E., Mikkelsen, A., Thelander, C., Stangl, J., Ohlsson, B. J., Gustafsson, A., Lundgren, E., Samuelson, L., & Seifert, W. (2007). Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings. Advanced Materials, 19(14), 1801-1806. https://doi.org/10.1002/adma.200700285

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title = "Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings",

abstract = "Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.",

author = "T. M{\aa}rtensson and Wagner, {J. B.} and E. Hilner and A. Mikkelsen and C. Thelander and J. Stangl and Ohlsson, {B. J.} and A. Gustafsson and E. Lundgren and L. Samuelson and W. Seifert",

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Mårtensson, T, Wagner, JB, Hilner, E, Mikkelsen, A, Thelander, C, Stangl, J, Ohlsson, BJ, Gustafsson, A, Lundgren, E, Samuelson, L & Seifert, W 2007, 'Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings', Advanced Materials, vol. 19, no. 14, pp. 1801-1806. https://doi.org/10.1002/adma.200700285

TY - JOUR

T1 - Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

AU - Mårtensson, T.

AU - Wagner, J. B.

AU - Hilner, E.

AU - Mikkelsen, A.

AU - Thelander, C.

AU - Stangl, J.

AU - Ohlsson, B. J.

AU - Gustafsson, A.

AU - Lundgren, E.

AU - Samuelson, L.

AU - Seifert, W.

PY - 2007

Y1 - 2007

N2 - Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

AB - Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

U2 - 10.1002/adma.200700285

DO - 10.1002/adma.200700285

M3 - Journal article

SN - 0935-9648

VL - 19

SP - 1801

EP - 1806

JO - Advanced Materials

JF - Advanced Materials

IS - 14

ER -

Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Abstract

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