Enhancing slow- and fast-light effects in quantum dot semiconductor waveguides through ultrafast dynamics

Yaohui Chen (Invited author), Jesper Mørk (Invited author)

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    In this paper we review our theoretical work on slow and fast light effects in quantum dot semiconductor optical amplifiers (QD SOAs), in particular we investigate the carrier dynamical contributions to the dynamic gain grating and cross gain modulation induced by unique ultrafast inter-subband carrier dynamics between discrete QD bound states. Our calculations predict that by increasing the injection current density, additional ultra-fast coherent gain contributions around 100GHz arise in contrast to the slow sub-gigahertz carrier density pulsation (CDP) effects. For potential applications in microwave photonics, especially targeting the millimeter wave range, we propose that quantum dot devices might be used to realize an optically fed microwave phase shifter in the frequency range of 100GHz.
    Original languageEnglish
    JournalProceedings of SPIE--the international society for optical engineering
    Volume7937
    Issue number1
    Pages (from-to)793709-11
    ISSN0277-786X
    DOIs
    Publication statusPublished - 2011
    EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XV - San Francisco, United States
    Duration: 24 Jan 201126 Jan 2011
    Conference number: 15

    Conference

    ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials XV
    Number15
    Country/TerritoryUnited States
    CitySan Francisco
    Period24/01/201126/01/2011

    Keywords

    • Semiconductor optical amplifier
    • Quantum dot
    • Coherent population oscillations
    • Slow light
    • Cross gain modulation

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