Enhancing and Controlling Plasmons in Janus MoSSe-Graphene Based van der Waals Heterostructures

L. S. R. Cavalcante, M. N. Gjerding, Andrey Chaves, K. S. Thygesen*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We explore the use of MoSSe Janus layers, which possess an intrinsic electric dipole caused by their out-of-plane structural asymmetry, to selectively dope graphene embedded inside a heterostructure without the need of external sources (such as electrostatic gates or chemical functionalization) in order to engineer graphene plasmons. Using the quantum-electrostatic heterostructure method, we demonstrate that through the control of the plasmon energy via the doping level and the hybridization of plasmons in different layers, we can reach graphene plasmon energies up to 0.5 eV or selectively quench certain (symmetric) modes by Landau damping. The possibility of using other Janus transition-metal dichalcogenides that could improve this effect is also investigated.

Original languageEnglish
JournalJournal of Physical Chemistry C
Volume123
Issue number26
Pages (from-to)16373-16379
Number of pages7
ISSN1932-7447
DOIs
Publication statusPublished - 2019

Cite this

@article{49344475c0cb4fe9960e2bef369eacaa,
title = "Enhancing and Controlling Plasmons in Janus MoSSe-Graphene Based van der Waals Heterostructures",
abstract = "We explore the use of MoSSe Janus layers, which possess an intrinsic electric dipole caused by their out-of-plane structural asymmetry, to selectively dope graphene embedded inside a heterostructure without the need of external sources (such as electrostatic gates or chemical functionalization) in order to engineer graphene plasmons. Using the quantum-electrostatic heterostructure method, we demonstrate that through the control of the plasmon energy via the doping level and the hybridization of plasmons in different layers, we can reach graphene plasmon energies up to 0.5 eV or selectively quench certain (symmetric) modes by Landau damping. The possibility of using other Janus transition-metal dichalcogenides that could improve this effect is also investigated.",
author = "Cavalcante, {L. S. R.} and Gjerding, {M. N.} and Andrey Chaves and Thygesen, {K. S.}",
year = "2019",
doi = "10.1021/acs.jpcc.9b04000",
language = "English",
volume = "123",
pages = "16373--16379",
journal = "The Journal of Physical Chemistry Part C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "26",

}

Enhancing and Controlling Plasmons in Janus MoSSe-Graphene Based van der Waals Heterostructures. / Cavalcante, L. S. R.; Gjerding, M. N.; Chaves, Andrey; Thygesen, K. S.

In: Journal of Physical Chemistry C, Vol. 123, No. 26, 2019, p. 16373-16379.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Enhancing and Controlling Plasmons in Janus MoSSe-Graphene Based van der Waals Heterostructures

AU - Cavalcante, L. S. R.

AU - Gjerding, M. N.

AU - Chaves, Andrey

AU - Thygesen, K. S.

PY - 2019

Y1 - 2019

N2 - We explore the use of MoSSe Janus layers, which possess an intrinsic electric dipole caused by their out-of-plane structural asymmetry, to selectively dope graphene embedded inside a heterostructure without the need of external sources (such as electrostatic gates or chemical functionalization) in order to engineer graphene plasmons. Using the quantum-electrostatic heterostructure method, we demonstrate that through the control of the plasmon energy via the doping level and the hybridization of plasmons in different layers, we can reach graphene plasmon energies up to 0.5 eV or selectively quench certain (symmetric) modes by Landau damping. The possibility of using other Janus transition-metal dichalcogenides that could improve this effect is also investigated.

AB - We explore the use of MoSSe Janus layers, which possess an intrinsic electric dipole caused by their out-of-plane structural asymmetry, to selectively dope graphene embedded inside a heterostructure without the need of external sources (such as electrostatic gates or chemical functionalization) in order to engineer graphene plasmons. Using the quantum-electrostatic heterostructure method, we demonstrate that through the control of the plasmon energy via the doping level and the hybridization of plasmons in different layers, we can reach graphene plasmon energies up to 0.5 eV or selectively quench certain (symmetric) modes by Landau damping. The possibility of using other Janus transition-metal dichalcogenides that could improve this effect is also investigated.

U2 - 10.1021/acs.jpcc.9b04000

DO - 10.1021/acs.jpcc.9b04000

M3 - Journal article

VL - 123

SP - 16373

EP - 16379

JO - The Journal of Physical Chemistry Part C

JF - The Journal of Physical Chemistry Part C

SN - 1932-7447

IS - 26

ER -