Enhancement of the chemical stability in confined δ-Bi2O3

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Abstract

Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials.
Original languageEnglish
JournalNature Materials
Volume14
Issue number5
Pages (from-to)500-504
Number of pages5
ISSN1476-1122
DOIs
Publication statusPublished - 2015

Keywords

  • Nanoscale materials

Cite this

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title = "Enhancement of the chemical stability in confined δ-Bi2O3",
abstract = "Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials.",
keywords = "Nanoscale materials",
author = "Simone Sanna and Vincenzo Esposito and Andreasen, {Jens Wenzel} and Johan Hjelm and Wei Zhang and Takeshi Kasama and Simonsen, {S{\o}ren Bredmose} and Mogens Christensen and S{\o}ren Linderoth and Nini Pryds",
year = "2015",
doi = "10.1038/nmat4266",
language = "English",
volume = "14",
pages = "500--504",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "5",

}

Enhancement of the chemical stability in confined δ-Bi2O3. / Sanna, Simone; Esposito, Vincenzo; Andreasen, Jens Wenzel; Hjelm, Johan; Zhang, Wei; Kasama, Takeshi; Simonsen, Søren Bredmose; Christensen, Mogens; Linderoth, Søren; Pryds, Nini.

In: Nature Materials, Vol. 14, No. 5, 2015, p. 500-504.

Research output: Contribution to journalLetterResearchpeer-review

TY - JOUR

T1 - Enhancement of the chemical stability in confined δ-Bi2O3

AU - Sanna, Simone

AU - Esposito, Vincenzo

AU - Andreasen, Jens Wenzel

AU - Hjelm, Johan

AU - Zhang, Wei

AU - Kasama, Takeshi

AU - Simonsen, Søren Bredmose

AU - Christensen, Mogens

AU - Linderoth, Søren

AU - Pryds, Nini

PY - 2015

Y1 - 2015

N2 - Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials.

AB - Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials.

KW - Nanoscale materials

U2 - 10.1038/nmat4266

DO - 10.1038/nmat4266

M3 - Letter

VL - 14

SP - 500

EP - 504

JO - Nature Materials

JF - Nature Materials

SN - 1476-1122

IS - 5

ER -