Enhancement of the chemical stability in confined δ-Bi2O3

Simone Sanna, Vincenzo Esposito, Jens Wenzel Andreasen, Johan Hjelm, Wei Zhang, Takeshi Kasama, Søren Bredmose Simonsen, Mogens Christensen, Søren Linderoth, Nini Pryds

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Abstract

Bismuth-oxide-based materials are the building blocks for modern ferroelectrics1, multiferroics2, gas sensors3, light photocatalysts4 and fuel cells5,6. Although the cubic fluorite δ-phase of bismuth oxide (δ-Bi2O3) exhibits the highest conductivity of known solid-state oxygen ion conductors5, its instability prevents use at low temperature7–10. Here we demonstrate the possibility of stabilizing δ-Bi2O3 using highly coherent interfaces of alternating layers of Er2O3-stabilized δ-Bi2O3 and Gd2O3-doped CeO2. Remarkably, an exceptionally high chemical stability in reducing conditions and redox cycles at high temperature, usually unattainable for Bi2O3-based materials, is achieved. Even more interestingly, at low oxygen partial pressure the layered material shows anomalous high conductivity, equal or superior to pure δ-Bi2O3 in air. This suggests a strategy to design and stabilize new materials that are comprised of intrinsically unstable but high-performing component materials.
Original languageEnglish
JournalNature Materials
Volume14
Issue number5
Pages (from-to)500-504
Number of pages5
ISSN1476-1122
DOIs
Publication statusPublished - 2015

Keywords

  • Nanoscale materials

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