Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters

Martijn S. Duraij*, Yudi Xiao, Gabriel Zsurzsan, Zhe Zang

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    52 Downloads (Pure)

    Abstract

    Parasitic components in eGaN-FETs impact the dynamic performance of switching stages. The capacitances seen, primarily on the output characteristics, of these devices are a main contributor towards switching losses and therefor converter efficiency. Additionally, the threshold voltage of the device has an impact towards the switching speed and therefore the efficiency of a power stage. This study shows the impact of extreme temperatures towards the parasitics that impact the switching behaviour of a power stage. A literature research is conducted exploring the various mechanisms and temperature dependancies, which are then related towards transient operations of eGaN-FETs. A device was chosen to perform measurements on output-, reverse transfer capacitance and threshold voltage while increasing temperature from 100 ◦C op to 225 ◦C. The presented results show a large impact of temperature in these parasisic elements that show that high temperature switch-mode power converters need additional design work to ensure switching performance and lifetime.
    Original languageEnglish
    JournalAdditional Conferences (device Packaging, Hitec, Hiten, and Cicmt)
    Volume2021
    Issue numberHiTEC
    Pages (from-to)000053-000057
    Number of pages5
    ISSN2380-4491
    DOIs
    Publication statusPublished - 2021

    Keywords

    • Device characterization
    • eGaN-FET
    • High temperature
    • Parasitic components
    • Switching losses

    Fingerprint

    Dive into the research topics of 'Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters'. Together they form a unique fingerprint.

    Cite this