Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters

Martijn S. Duraij*, Yudi Xiao, Gabriel Zsurzsan, Zhe Zang

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

Parasitic components in eGaN-FETs impact the dynamic performance of switching stages. The capacitances seen, primarily on the output characteristics, of these devices are a main contributor towards switching losses and therefor converter efficiency. Additionally, the threshold voltage of the device has an impact towards the switching speed and therefore the efficiency of a power stage. This study shows the impact of extreme temperatures towards the parasitics that impact the switching behaviour of a power stage. A literature research is conducted exploring the various mechanisms and temperature dependancies, which are then related towards transient operations of eGaN-FETs. A device was chosen to perform measurements on output-, reverse transfer capacitance and threshold voltage while increasing temperature from 100 ◦C op to 225 ◦C. The presented results show a large impact of temperature in these parasisic elements that show that high temperature switch-mode power converters need additional design work to ensure switching performance and lifetime.
Original languageEnglish
JournalAdditional Conferences (device Packaging, Hitec, Hiten, and Cicmt)
Volume2021
Issue numberHiTEC
Pages (from-to)000053-000057
Number of pages5
ISSN2380-4491
DOIs
Publication statusPublished - 2021

Keywords

  • Device characterization
  • eGaN-FET
  • High temperature
  • Parasitic components
  • Switching losses

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