Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part I: Static Parasitic Parameters

Martijn S. Duraij*, Yudi Xiao, Gabriel Zsurzsan, Zhe Zhang

*Corresponding author for this work

Research output: Contribution to journal β€Ί Journal article β€Ί Research β€Ί peer-review

43 Downloads (Pure)

Abstract

Smaller packaging and sizing of power electronics and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. Found drift mechanisms in an eGaN-FET are studied by literature and related to measurements performed in extreme temeprature conditions far beyond the manufacturer recommended operating range. A thermal chamber was build to precisely measure the effect of temperature in these devices using a curve tracer. It is found that the increment in π‘…π·π‘†π‘œπ‘›, 𝐼𝐷𝑆𝑆, 𝐼𝐺𝑆𝑆 and 𝑉𝑆𝐷 can be justified by the theory and backed up by measurements. It is also found that the particular eGaN-FET can be suited for extreme temperature operating conditions.
Original languageEnglish
JournalAdditional Conferences (device Packaging, Hitec, Hiten, and Cicmt)
Volume2021
Issue numberHiTEC
Pages (from-to)000048-000052
ISSN2380-4491
DOIs
Publication statusPublished - 2021

Keywords

  • Conduction losses
  • Device characterization
  • eGaN-FET
  • High temperature
  • Parasitic components

Fingerprint

Dive into the research topics of 'Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part I: Static Parasitic Parameters'. Together they form a unique fingerprint.

Cite this