Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

Huanming Ma; Zhiwei Qin; Zaide Wang; Mashkoor Ahmad; Hongyu Sun

doi:10.1016/j.matlet.2017.07.014

Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

Huanming Ma
, Zhiwei Qin
, Zaide Wang
, Mashkoor Ahmad
, Hongyu Sun

CITIC Dicastal Wheel Manufacturing Co., Ltd
Pakistan Institute of Nuclear Science and Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V μm⁻¹ at a current density of 10 μA cm⁻², and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry.

Original language	English
Journal	Materials Letters
Volume	206
Pages (from-to)	162-165
Number of pages	4
ISSN	0167-577X
DOIs	https://doi.org/10.1016/j.matlet.2017.07.014
Publication status	Published - 2017

Keywords

Crystal growth
Field emission
Solution method
ZnO nanoneedle arrays

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10.1016/j.matlet.2017.07.014

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@article{f08a04a6ce724d1f854aab4125e3b463,

title = "Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature",

abstract = "ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V μm−1 at a current density of 10 μA cm−2, and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry.",

keywords = "Crystal growth, Field emission, Solution method, ZnO nanoneedle arrays",

author = "Huanming Ma and Zhiwei Qin and Zaide Wang and Mashkoor Ahmad and Hongyu Sun",

year = "2017",

doi = "10.1016/j.matlet.2017.07.014",

language = "English",

volume = "206",

pages = "162--165",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

AU - Ma, Huanming

AU - Qin, Zhiwei

AU - Wang, Zaide

AU - Ahmad, Mashkoor

AU - Sun, Hongyu

PY - 2017

Y1 - 2017

N2 - ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V μm−1 at a current density of 10 μA cm−2, and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry.

AB - ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V μm−1 at a current density of 10 μA cm−2, and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry.

KW - Crystal growth

KW - Field emission

KW - Solution method

KW - ZnO nanoneedle arrays

U2 - 10.1016/j.matlet.2017.07.014

DO - 10.1016/j.matlet.2017.07.014

M3 - Journal article

SN - 0167-577X

VL - 206

SP - 162

EP - 165

JO - Materials Letters

JF - Materials Letters

ER -

Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

Abstract

Keywords

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