ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws were 2.7 and 5.3 V μm−1 at a current density of 10 μA cm−2, and the field enhancement factors were 4939.3 for ZnO nns and 1423.6 for ZnO nws. The enhanced field emission properties in ZnO nns were ascribed to the sharp tip geometry.
- Crystal growth
- Field emission
- Solution method
- ZnO nanoneedle arrays
Ma, H., Qin, Z., Wang, Z., Ahmad, M., & Sun, H. (2017). Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature. Materials Letters, 206, 162-165. https://doi.org/10.1016/j.matlet.2017.07.014