Enhanced Emission Efficiency of Size-Controlled InGaN/GaN Green Nanopillar Light-Emitting Diodes

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Nanopillar InGaN/GaN green light-emitting diode (LED) arrays were fabricated by self-assembled Au nanoparticles patterning and dry etching process. Structure size and density of the nanopillar arrays have been modified by varying the Au film thickness in the nanopatterning process. Fabricated nanopillar LEDs have been characterized by both room temperature and temperature-dependent photoluminescence measurements. A considerable internal quantum efficiency enhancement was achieved which is attributed to the suppressed quantum confined Stark effect derived from the internal strain relaxation. Meanwhile light extraction efficiency can also be enhanced significantly due to the increased light scattering at nanopillar sidewall. Compared to the planar LED, the nanopillar LED demonstrates the greatest external quantum efficiency enhancement by a factor of 4.08. It is believed that this nanopillar fabrication method can serve as an effective approach to increase the
luminescence efficiency of LEDs.
Original languageEnglish
JournalInternational Journal of Optics and Photonic Engineering
Volume1
Issue number1
Number of pages6
Publication statusPublished - 2016

Bibliographical note

© 2016 Ou Y, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
http://vibgyorpublishers.org/content/international-journal-of-optics-and-photonic-engineering/ijope-1-001.php

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