Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor

Simone Santucci, Haiwu Zhang, Simone Sanna, Nini Pryds, Vincenzo Esposito*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabricated by a pulsed laser deposition method can be directly integrated onto the Si substrate by using TiN films of few nanometers as functional electrodes. The exceptional good coupling between TiN and Ce0.8Gd0.2O1.9 yields a high electrostriction coefficient of Qe = 40 m4 C−2 and a superior electrochemomechanical stability with respect to the metal electrodes.
Original languageEnglish
Article number 071104
JournalA P L Materials
Volume7
Issue number7
Number of pages5
ISSN2166-532X
DOIs
Publication statusPublished - 2019

Cite this

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title = "Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor",
abstract = "Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabricated by a pulsed laser deposition method can be directly integrated onto the Si substrate by using TiN films of few nanometers as functional electrodes. The exceptional good coupling between TiN and Ce0.8Gd0.2O1.9 yields a high electrostriction coefficient of Qe = 40 m4 C−2 and a superior electrochemomechanical stability with respect to the metal electrodes.",
author = "Simone Santucci and Haiwu Zhang and Simone Sanna and Nini Pryds and Vincenzo Esposito",
year = "2019",
doi = "10.1063/1.5091735",
language = "English",
volume = "7",
journal = "A P L Materials",
issn = "2166-532X",
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Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor. / Santucci, Simone; Zhang, Haiwu; Sanna, Simone; Pryds, Nini; Esposito, Vincenzo.

In: A P L Materials, Vol. 7, No. 7, 071104, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor

AU - Santucci, Simone

AU - Zhang, Haiwu

AU - Sanna, Simone

AU - Pryds, Nini

AU - Esposito, Vincenzo

PY - 2019

Y1 - 2019

N2 - Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabricated by a pulsed laser deposition method can be directly integrated onto the Si substrate by using TiN films of few nanometers as functional electrodes. The exceptional good coupling between TiN and Ce0.8Gd0.2O1.9 yields a high electrostriction coefficient of Qe = 40 m4 C−2 and a superior electrochemomechanical stability with respect to the metal electrodes.

AB - Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabricated by a pulsed laser deposition method can be directly integrated onto the Si substrate by using TiN films of few nanometers as functional electrodes. The exceptional good coupling between TiN and Ce0.8Gd0.2O1.9 yields a high electrostriction coefficient of Qe = 40 m4 C−2 and a superior electrochemomechanical stability with respect to the metal electrodes.

U2 - 10.1063/1.5091735

DO - 10.1063/1.5091735

M3 - Journal article

VL - 7

JO - A P L Materials

JF - A P L Materials

SN - 2166-532X

IS - 7

M1 - 071104

ER -