Enhanced conductivity in pulsed laser deposited Ce0.9Gd0.1O2−δ/SrTiO3 heterostructures

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Significant enhancement in the electrical conductivity of Ce0.9Gd0.1O2−δ (CGO) thin films (250 and 500 nm) deposited on MgO(001) substrate is observed by introducing ∼ 50 nm thin SrTiO3 buffer layer film. Introduction of the buffer layer is found to form epitaxial films, leading to minimal grain boundary network that results in a free conduction path with near-zero blocking effects perpendicular to current flow. The in-plane conductivity measurements confirm increase in conductivity with increase in compressive strain on CGO films. © 2010 American Institute of Physics
Original languageEnglish
JournalApplied Physics Letters
Volume97
Pages (from-to)143110
ISSN0003-6951
DOIs
Publication statusPublished - 2010

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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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