Abstract
Significant enhancement in the electrical conductivity of Ce0.9Gd0.1O2−δ (CGO) thin films (250 and 500 nm) deposited on MgO(001) substrate is observed by introducing ∼ 50 nm thin SrTiO3 buffer layer film. Introduction of the buffer layer is found to form epitaxial films, leading to minimal grain boundary network that results in a free conduction path with near-zero blocking effects perpendicular to current flow. The in-plane conductivity measurements confirm increase in conductivity with increase in compressive strain on CGO films.
© 2010 American Institute of Physics
Original language | English |
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Journal | Applied Physics Letters |
Volume | 97 |
Pages (from-to) | 143110 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2010 |
Bibliographical note
Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
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