Engineering piezoresistivity  using biaxially  strained silicon

Jesper Goor Pedersen; Jacob Richter; Mads Brandbyge; Erik Vilain Thomsen; Ole Hansen

doi:10.1063/1.3059557

Engineering piezoresistivity using biaxially strained silicon

Jesper Goor Pedersen, Jacob Richter, Mads Brandbyge, Erik Vilain Thomsen, Ole Hansen

Research output: Contribution to journal › Journal article › Research › peer-review

497 Downloads (Pure)

Abstract

We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.

Original language	English
Journal	Applied Physics Letters
Volume	93
Issue number	26
Pages (from-to)	263501
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3059557
Publication status	Published - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

piezoresistive devices
elemental semiconductors
p calculations
tensile strength
compressive strength
piezoresistance
silicon
k

Access to Document

10.1063/1.3059557

GoorFinal published version, 236 KB

http://link.aip.org/link/APPLAB/v93/i26/p263501/s1

OpenUrl availability

Full text

Cite this

@article{6f854d508bae4ab3bbcc7a29b841fbe0,

title = "Engineering piezoresistivity using biaxially strained silicon",

abstract = "We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.",

keywords = "piezoresistive devices, elemental semiconductors, p calculations, tensile strength, compressive strength, piezoresistance, silicon, k",

author = "Pedersen, {Jesper Goor} and Jacob Richter and Mads Brandbyge and Thomsen, {Erik Vilain} and Ole Hansen",

note = "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2008",

doi = "10.1063/1.3059557",

language = "English",

volume = "93",

pages = "263501",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Engineering piezoresistivity using biaxially strained silicon

AU - Pedersen, Jesper Goor

AU - Richter, Jacob

AU - Brandbyge, Mads

AU - Thomsen, Erik Vilain

AU - Hansen, Ole

N1 - Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2008

Y1 - 2008

N2 - We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.

AB - We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.

KW - piezoresistive devices

KW - elemental semiconductors

KW - p calculations

KW - tensile strength

KW - compressive strength

KW - piezoresistance

KW - silicon

KW - k

U2 - 10.1063/1.3059557

DO - 10.1063/1.3059557

M3 - Journal article

SN - 0003-6951

VL - 93

SP - 263501

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -