Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

Joachim E. Sestoft, Thomas Kanne, Aske Nørskov Gejl, Merlin von Soosten, Jeremy S. Yodh, Daniel Sherman, Brian Tarasinski, Michael Wimmer, Erik Johnson, Mingtang Deng, Jesper Nygard, Thomas Sand Jespersen, Charles M. Marcus, Peter Krogstrup*

*Corresponding author for this work

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Abstract

The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1-xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.
Original languageEnglish
Article number044202
JournalPhysical Review Materials
Volume2
Issue number4
Number of pages8
ISSN2475-9953
DOIs
Publication statusPublished - 2018

Cite this

Sestoft, J. E., Kanne, T., Gejl, A. N., von Soosten, M., Yodh, J. S., Sherman, D., ... Krogstrup, P. (2018). Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection. Physical Review Materials, 2(4), [044202 ]. https://doi.org/10.1103/PhysRevMaterials.2.044202
Sestoft, Joachim E. ; Kanne, Thomas ; Gejl, Aske Nørskov ; von Soosten, Merlin ; Yodh, Jeremy S. ; Sherman, Daniel ; Tarasinski, Brian ; Wimmer, Michael ; Johnson, Erik ; Deng, Mingtang ; Nygard, Jesper ; Jespersen, Thomas Sand ; Marcus, Charles M. ; Krogstrup, Peter. / Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection. In: Physical Review Materials. 2018 ; Vol. 2, No. 4.
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title = "Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection",
abstract = "The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1-xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.",
author = "Sestoft, {Joachim E.} and Thomas Kanne and Gejl, {Aske N{\o}rskov} and {von Soosten}, Merlin and Yodh, {Jeremy S.} and Daniel Sherman and Brian Tarasinski and Michael Wimmer and Erik Johnson and Mingtang Deng and Jesper Nygard and Jespersen, {Thomas Sand} and Marcus, {Charles M.} and Peter Krogstrup",
year = "2018",
doi = "10.1103/PhysRevMaterials.2.044202",
language = "English",
volume = "2",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
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Sestoft, JE, Kanne, T, Gejl, AN, von Soosten, M, Yodh, JS, Sherman, D, Tarasinski, B, Wimmer, M, Johnson, E, Deng, M, Nygard, J, Jespersen, TS, Marcus, CM & Krogstrup, P 2018, 'Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection', Physical Review Materials, vol. 2, no. 4, 044202 . https://doi.org/10.1103/PhysRevMaterials.2.044202

Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection. / Sestoft, Joachim E.; Kanne, Thomas; Gejl, Aske Nørskov; von Soosten, Merlin; Yodh, Jeremy S.; Sherman, Daniel; Tarasinski, Brian; Wimmer, Michael; Johnson, Erik; Deng, Mingtang; Nygard, Jesper; Jespersen, Thomas Sand; Marcus, Charles M.; Krogstrup, Peter.

In: Physical Review Materials, Vol. 2, No. 4, 044202 , 2018.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

AU - Sestoft, Joachim E.

AU - Kanne, Thomas

AU - Gejl, Aske Nørskov

AU - von Soosten, Merlin

AU - Yodh, Jeremy S.

AU - Sherman, Daniel

AU - Tarasinski, Brian

AU - Wimmer, Michael

AU - Johnson, Erik

AU - Deng, Mingtang

AU - Nygard, Jesper

AU - Jespersen, Thomas Sand

AU - Marcus, Charles M.

AU - Krogstrup, Peter

PY - 2018

Y1 - 2018

N2 - The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1-xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.

AB - The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1-xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.

U2 - 10.1103/PhysRevMaterials.2.044202

DO - 10.1103/PhysRevMaterials.2.044202

M3 - Journal article

VL - 2

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 4

M1 - 044202

ER -