Emission and Absorption Entropy Generation in Semiconductors

Kasper Reck, Aapo Varpula, Mika Prunnila, Ole Hansen

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Abstract

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.
Original languageEnglish
Title of host publicationProceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition
Publication date2013
Pages20-23
Publication statusPublished - 2013
Event28th European Photovoltaic Solar Energy Conference and Exhibition - Villepinte, France
Duration: 30 Sep 20134 Oct 2013

Conference

Conference28th European Photovoltaic Solar Energy Conference and Exhibition
CountryFrance
CityVillepinte
Period30/09/201304/10/2013

Keywords

  • Fundamentals
  • Modelling
  • Perfomance

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