EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

Tom Keinicke Johansen*, Ralf Doerner, Nils Weimann, Maruf Hossain, Viktor Krozer, Wolfgang Heinrich

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
    Original languageEnglish
    JournalInternational Journal of Microwave and Wireless Technologies
    Pages (from-to)1-9
    Number of pages9
    ISSN1759-0787
    DOIs
    Publication statusPublished - 2018

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