Abstract
| Original language | English |
|---|---|
| Journal | International Journal of Microwave and Wireless Technologies |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| ISSN | 1759-0787 |
| DOIs | |
| Publication status | Published - 2018 |
Cite this
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EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling. / Johansen, Tom Keinicke; Doerner, Ralf; Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang.
In: International Journal of Microwave and Wireless Technologies, 2018, p. 1-9.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling
AU - Johansen, Tom Keinicke
AU - Doerner, Ralf
AU - Weimann, Nils
AU - Hossain, Maruf
AU - Krozer, Viktor
AU - Heinrich, Wolfgang
PY - 2018
Y1 - 2018
N2 - In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
AB - In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
U2 - 10.1017/S1759078718000636
DO - 10.1017/S1759078718000636
M3 - Journal article
SP - 1
EP - 9
JO - International Journal of Microwave and Wireless Technologies
JF - International Journal of Microwave and Wireless Technologies
SN - 1759-0787
ER -