EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

Tom Keinicke Johansen*, Ralf Doerner, Nils Weimann, Maruf Hossain, Viktor Krozer, Wolfgang Heinrich

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
Original languageEnglish
JournalInternational Journal of Microwave and Wireless Technologies
Pages (from-to)1-9
Number of pages9
ISSN1759-0787
DOIs
Publication statusPublished - 2018

Cite this

Johansen, Tom Keinicke ; Doerner, Ralf ; Weimann, Nils ; Hossain, Maruf ; Krozer, Viktor ; Heinrich, Wolfgang. / EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling. In: International Journal of Microwave and Wireless Technologies. 2018 ; pp. 1-9.
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abstract = "In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.",
author = "Johansen, {Tom Keinicke} and Ralf Doerner and Nils Weimann and Maruf Hossain and Viktor Krozer and Wolfgang Heinrich",
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EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling. / Johansen, Tom Keinicke; Doerner, Ralf; Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang.

In: International Journal of Microwave and Wireless Technologies, 2018, p. 1-9.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

AU - Johansen, Tom Keinicke

AU - Doerner, Ralf

AU - Weimann, Nils

AU - Hossain, Maruf

AU - Krozer, Viktor

AU - Heinrich, Wolfgang

PY - 2018

Y1 - 2018

N2 - In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.

AB - In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.

U2 - 10.1017/S1759078718000636

DO - 10.1017/S1759078718000636

M3 - Journal article

SP - 1

EP - 9

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

SN - 1759-0787

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