EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

Tom Keinicke Johansen, Nils Weimann, Ralf Doerner, Maruf Hossain, Viktor Krozer, Wolfgang Heinrich

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.
    Original languageEnglish
    Title of host publicationProceedings of the 12th European Microwave Integrated Circuits Conference
    Number of pages4
    PublisherIEEE
    Publication date2017
    Pages240-243
    DOIs
    Publication statusPublished - 2017
    Event12th European Microwave Integrated Circuits Conference - Nuremberg, Germany
    Duration: 8 Oct 201710 Oct 2017
    Conference number: 12

    Conference

    Conference12th European Microwave Integrated Circuits Conference
    Number12
    Country/TerritoryGermany
    CityNuremberg
    Period08/10/201710/10/2017

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