In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.
|Title of host publication||Proceedings of the 12th European Microwave Integrated Circuits Conference|
|Number of pages||4|
|Publication status||Published - 2017|
|Event||12th European Microwave Integrated Circuits Conference (EuMIC) - Nuremberg, Germany|
Duration: 8 Oct 2017 → 10 Oct 2017
|Conference||12th European Microwave Integrated Circuits Conference (EuMIC)|
|Period||08/10/2017 → 10/10/2017|