EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

Tom Keinicke Johansen; Nils Weimann; Ralf Doerner; Maruf Hossain; Viktor Krozer; Wolfgang Heinrich

doi:10.23919/EuMIC.2017.8230704

EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

Tom Keinicke Johansen, Nils Weimann, Ralf Doerner, Maruf Hossain, Viktor Krozer, Wolfgang Heinrich

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.

Original language	English
Title of host publication	Proceedings of the 12th European Microwave Integrated Circuits Conference
Number of pages	4
Publisher	IEEE
Publication date	2017
Pages	240-243
DOIs	https://doi.org/10.23919/EuMIC.2017.8230704
Publication status	Published - 2017
Event	12th European Microwave Integrated Circuits Conference (EuMIC) - Nuremberg, Germany Duration: 8 Oct 2017 → 10 Oct 2017

Conference

Conference	12th European Microwave Integrated Circuits Conference (EuMIC)
Country	Germany
City	Nuremberg
Period	08/10/2017 → 10/10/2017

Access to Document

10.23919/EuMIC.2017.8230704

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@inproceedings{796041e239794eeb8047ebcf9452851d,

title = "EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs",

abstract = "In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.",

author = "Johansen, {Tom Keinicke} and Nils Weimann and Ralf Doerner and Maruf Hossain and Viktor Krozer and Wolfgang Heinrich",

year = "2017",

doi = "10.23919/EuMIC.2017.8230704",

language = "English",

pages = "240--243",

booktitle = "Proceedings of the 12th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "12th European Microwave Integrated Circuits Conference (EuMIC) ; Conference date: 08-10-2017 Through 10-10-2017",

}

Johansen, TK, Weimann, N, Doerner, R, Hossain, M, Krozer, V & Heinrich, W 2017, EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs. in Proceedings of the 12th European Microwave Integrated Circuits Conference. IEEE, pp. 240-243, 12th European Microwave Integrated Circuits Conference (EuMIC), Nuremberg, Germany, 08/10/2017. https://doi.org/10.23919/EuMIC.2017.8230704

EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs. / Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang.

Proceedings of the 12th European Microwave Integrated Circuits Conference. IEEE, 2017. p. 240-243.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

AU - Johansen, Tom Keinicke

AU - Weimann, Nils

AU - Doerner, Ralf

AU - Hossain, Maruf

AU - Krozer, Viktor

AU - Heinrich, Wolfgang

PY - 2017

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AB - In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.

U2 - 10.23919/EuMIC.2017.8230704

DO - 10.23919/EuMIC.2017.8230704

M3 - Article in proceedings

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BT - Proceedings of the 12th European Microwave Integrated Circuits Conference

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Y2 - 8 October 2017 through 10 October 2017

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