EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

Tom Keinicke Johansen, Nils Weimann, Ralf Doerner, Maruf Hossain, Viktor Krozer, Wolfgang Heinrich

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.
Original languageEnglish
Title of host publicationProceedings of the 12th European Microwave Integrated Circuits Conference
Number of pages4
PublisherIEEE
Publication date2017
Pages240-243
DOIs
Publication statusPublished - 2017
Event12th European Microwave Integrated Circuits Conference (EuMIC) - Nuremberg, Germany
Duration: 8 Oct 201710 Oct 2017

Conference

Conference12th European Microwave Integrated Circuits Conference (EuMIC)
CountryGermany
CityNuremberg
Period08/10/201710/10/2017

Cite this

Johansen, T. K., Weimann, N., Doerner, R., Hossain, M., Krozer, V., & Heinrich, W. (2017). EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs. In Proceedings of the 12th European Microwave Integrated Circuits Conference (pp. 240-243). IEEE. https://doi.org/10.23919/EuMIC.2017.8230704