Abstract
In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network is verified against measured S-parameters up to 110 GHz.
| Original language | English |
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| Title of host publication | Proceedings of the 12th European Microwave Integrated Circuits Conference |
| Number of pages | 4 |
| Publisher | IEEE |
| Publication date | 2017 |
| Pages | 240-243 |
| DOIs | |
| Publication status | Published - 2017 |
| Event | 12th European Microwave Integrated Circuits Conference - Nuremberg, Germany Duration: 8 Oct 2017 → 10 Oct 2017 Conference number: 12 |
Conference
| Conference | 12th European Microwave Integrated Circuits Conference |
|---|---|
| Number | 12 |
| Country/Territory | Germany |
| City | Nuremberg |
| Period | 08/10/2017 → 10/10/2017 |