EM Simulation Accuracy Enhancement for Broadband Modeling of On-Wafer Passive Components

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    Abstract

    This paper describes methods for accuracy enhancement in broadband modeling of on-wafer passive components using electromagnetic (EM) simulation. It is shown that standard excitation schemes for integrated component simulation leads to poor correlation with on-wafer measurements beyond the lower GHz frequency range. We show that this is due to parasitic effects and higher-order modes caused by the excitation schemes. We propose a simple equivalent circuit for the parasitic effects in the well-known ground ring excitation scheme. An extended L-2L calibration method is shown to improve significantly the accuracy of the on-wafer component modeling, when applied to parasitic effect removal associated with the excitation schemes.
    Original languageEnglish
    Title of host publicationProceedings of the 37th European Microwave Conference : EuMIC 2007
    PublisherIEEE
    Publication date2007
    Pages1245-1248
    ISBN (Print)978-2-87487-001-9
    DOIs
    Publication statusPublished - 2007
    Event2nd European Microwave Integrated Circuit Conference - Munich, Germany
    Duration: 8 Oct 200710 Oct 2007
    Conference number: 2
    https://ieeexplore.ieee.org/xpl/conhome/4412607/proceeding

    Conference

    Conference2nd European Microwave Integrated Circuit Conference
    Number2
    Country/TerritoryGermany
    CityMunich
    Period08/10/200710/10/2007
    Internet address

    Bibliographical note

    Copyright: 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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