Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics: Paper

Research output: Contribution to journalJournal article – Annual report year: 2015Researchpeer-review

  • Author: Monaco, Roberto

    Institute of Applied Sciences and Intelligent Systems 'E. Caianello'

  • Author: Granata, Carmine

    Institute of Applied Sciences and Intelligent Systems 'E. Caianello', Denmark

  • Author: Vettoliere, Antonio

    Institute of Applied Sciences and Intelligent Systems 'E. Caianello', Denmark

  • Author: Mygind, Jesper

    Department of Physics, Technical University of Denmark, Fysikvej, 2800, Kgs. Lyngby, Denmark

View graph of relations

We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane or in the perpendicular direction. We report a detailed study of both short and long elliptic annular junctions having different eccentricities. For junctions having a normalized perimeter less than one the threshold curves are derived and computed even in the case with one trapped Josephson vortex. For longer junctions a numerical analysis is carried out after the derivation of the appropriate perturbed sine-Gordon equation. For a given applied field we find that a number of different phase profiles exist which differ according to the number of fluxon-antifluxon pairs. We demonstrate that in samples made by specularly symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions support the theoretical analysis provided self-field effects are taken into account.
Original languageEnglish
Article number085010
JournalSuperconductor Science and Technology
Volume28
Issue number8
Pages (from-to)1-14
Number of pages15
ISSN0953-2048
DOIs
Publication statusPublished - 2015
CitationsWeb of Science® Times Cited: No match on DOI

ID: 114171154