Electrostriction in GaN/AlN heterostructures

Morten Willatzen; L. Wang; L.C. Lew Yan Voon

doi:10.1016/j.spmi.2007.07.009

Electrostriction in GaN/AlN heterostructures

Morten Willatzen
, L. Wang
, L.C. Lew Yan Voon

University of Southern Denmark
Wright State University

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

A one-dimensional model accounting for electrostriction, lattice mismatch, piezoelectricity, and strain is presented with special emphasis on GaN/AlN heterostructures recently examined extensively in the literature. It is shown that electrostriction, being a second-order effect in the strain–electric field relation, plays a significant, sometimes dominant contribution subject to DC voltage conditions and externally imposed hydrostatic pressure. Model results are based on experimentally reported values for electrostriction coefficients in GaN.

Original language	English
Journal	Superlattices and Microstructures
Volume	43
Issue number	5-6
Pages (from-to)	436-440
ISSN	0749-6036
DOIs	https://doi.org/10.1016/j.spmi.2007.07.009
Publication status	Published - 2008
Externally published	Yes
Event	7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures - Havana, Cuba Duration: 12 Apr 2007 → 17 Apr 2007 Conference number: 7

Conference

Conference	7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures
Number	7
Country/Territory	Cuba
City	Havana
Period	12/04/2007 → 17/04/2007

Keywords

Electrostriction
Piezoelectricity
Strain
Quantum wells

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10.1016/j.spmi.2007.07.009

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@inproceedings{7c75547d2140421681dfb57931fc1e7c,

title = "Electrostriction in GaN/AlN heterostructures",

abstract = "A one-dimensional model accounting for electrostriction, lattice mismatch, piezoelectricity, and strain is presented with special emphasis on GaN/AlN heterostructures recently examined extensively in the literature. It is shown that electrostriction, being a second-order effect in the strain{\textendash}electric field relation, plays a significant, sometimes dominant contribution subject to DC voltage conditions and externally imposed hydrostatic pressure. Model results are based on experimentally reported values for electrostriction coefficients in GaN.",

keywords = "Electrostriction, Piezoelectricity, Strain, Quantum wells",

author = "Morten Willatzen and L. Wang and \{Lew Yan Voon\}, L.C.",

year = "2008",

doi = "10.1016/j.spmi.2007.07.009",

language = "English",

volume = "43",

pages = "436--440",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press",

number = "5-6",

note = "7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures, PLMCN7 ; Conference date: 12-04-2007 Through 17-04-2007",

}

TY - GEN

T1 - Electrostriction in GaN/AlN heterostructures

AU - Willatzen, Morten

AU - Wang, L.

AU - Lew Yan Voon, L.C.

N1 - Conference code: 7

PY - 2008

Y1 - 2008

N2 - A one-dimensional model accounting for electrostriction, lattice mismatch, piezoelectricity, and strain is presented with special emphasis on GaN/AlN heterostructures recently examined extensively in the literature. It is shown that electrostriction, being a second-order effect in the strain–electric field relation, plays a significant, sometimes dominant contribution subject to DC voltage conditions and externally imposed hydrostatic pressure. Model results are based on experimentally reported values for electrostriction coefficients in GaN.

AB - A one-dimensional model accounting for electrostriction, lattice mismatch, piezoelectricity, and strain is presented with special emphasis on GaN/AlN heterostructures recently examined extensively in the literature. It is shown that electrostriction, being a second-order effect in the strain–electric field relation, plays a significant, sometimes dominant contribution subject to DC voltage conditions and externally imposed hydrostatic pressure. Model results are based on experimentally reported values for electrostriction coefficients in GaN.

KW - Electrostriction

KW - Piezoelectricity

KW - Strain

KW - Quantum wells

U2 - 10.1016/j.spmi.2007.07.009

DO - 10.1016/j.spmi.2007.07.009

M3 - Conference article

SN - 0749-6036

VL - 43

SP - 436

EP - 440

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5-6

T2 - 7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures

Y2 - 12 April 2007 through 17 April 2007

ER -

Electrostriction in GaN/AlN heterostructures

Abstract

Conference

Keywords

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