Electrostriction in GaN/AlN heterostructures

Morten Willatzen, L. Wang, L.C. Lew Yan Voon

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

A one-dimensional model accounting for electrostriction, lattice mismatch, piezoelectricity, and strain is presented with special emphasis on GaN/AlN heterostructures recently examined extensively in the literature. It is shown that electrostriction, being a second-order effect in the strain–electric field relation, plays a significant, sometimes dominant contribution subject to DC voltage conditions and externally imposed hydrostatic pressure. Model results are based on experimentally reported values for electrostriction coefficients in GaN.
Original languageEnglish
JournalSuperlattices and Microstructures
Volume43
Issue number5-6
Pages (from-to)436-440
ISSN0749-6036
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures (PLMCN7) - Havana, Cuba
Duration: 12 Apr 200717 Apr 2007
Conference number: 7

Conference

Conference7th International Conference on Physics of Ligh-Matter Coupling in Nanostructures (PLMCN7)
Number7
CountryCuba
CityHavana
Period12/04/200717/04/2007

Keywords

  • Electrostriction
  • Piezoelectricity
  • Strain
  • Quantum wells

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