Electrostriction Coefficients of GaN, AlN, MgO and ZnO in the Wurtzite Structure from First-Principles

I Kornev, Morten Willatzen, B Lassen, L C Lew Yan Voon

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

First-principles calculations have been performed on wurtzite AlN, GaN, MgO and ZnO, with a view to obtaining electrostriction coefficients.
Original languageEnglish
Title of host publicationPhysics of Semiconductors
Publication date2010
Pages71-72
ISBN (Print)978-0-7354-0736-7
Publication statusPublished - 2010
Externally publishedYes
Event29th International Conference on the Physics of Semiconductors - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Conference

Conference29th International Conference on the Physics of Semiconductors
CountryBrazil
CityRio de Janeiro
Period27/07/200801/08/2008
SeriesA I P Conference Proceedings Series
Volume1199
ISSN0094-243X

Keywords

  • Electrostriction
  • Wurtzite
  • Ab initio

Cite this

Kornev, I., Willatzen, M., Lassen, B., & Voon, L. C. L. Y. (2010). Electrostriction Coefficients of GaN, AlN, MgO and ZnO in the Wurtzite Structure from First-Principles. In Physics of Semiconductors (pp. 71-72). A I P Conference Proceedings Series, Vol.. 1199