Electron–phonon coupling in single-layer MoS2

Sanjoy K. Mahatha*, Arlette S. Ngankeu, Nicki Frank Hinsche, Ingrid Mertig, Kevin Guilloy, Peter L. Matzen, Marco Bianchi, Charlotte E. Sanders, Jill A. Miwa, Harsh Bana, Elisabetta Travaglia, Paolo Lacovig, Luca Bignardi, Daniel Lizzit, Rosanna Larciprete, Alessandro Baraldi, Silvano Lizzit, Philip Hofmann

*Corresponding author for this work

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Abstract

The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron–phonon coupling parameter λ are obtained by measuring the linewidth of the spin–split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of λ for the upper and lower spin–split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS2. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS2 on Au(111). The fact that the absolute valence band maximum in single-layer MoS2 at K is almost degenerate with the local valence band maximum at Γ can potentially be used to tune the strength of the electron–phonon interaction in this material.

Original languageEnglish
JournalSurface Science
Volume681
Pages (from-to)64-69
Number of pages6
ISSN0039-6028
DOIs
Publication statusPublished - 2019

Keywords

  • Angle-resolved photoemission spectroscopy
  • Density functional theory
  • Electron-phonon coupling
  • Transition metal dichalcogenides

Cite this

Mahatha, S. K., Ngankeu, A. S., Hinsche, N. F., Mertig, I., Guilloy, K., Matzen, P. L., Bianchi, M., Sanders, C. E., Miwa, J. A., Bana, H., Travaglia, E., Lacovig, P., Bignardi, L., Lizzit, D., Larciprete, R., Baraldi, A., Lizzit, S., & Hofmann, P. (2019). Electron–phonon coupling in single-layer MoS2. Surface Science, 681, 64-69. https://doi.org/10.1016/j.susc.2018.11.012