We experimentally studied the transport properties and magnetoresistance behavior of a La0.7Ce0.3MnO3/SrTiO3 (doped by 1 wt% Nb) junction. Based on the analyses of the current–voltage relations and the depletion width, we conclude that the dominant transport mechanism of the junction is tunneling. The magnetoresistance of the junction is negative throughout the whole bias voltage range (from −1 V to 0.4 V) and the whole temperature range (below 300 K). It is believed that the magnetic field depresses the junction resistance by reducing the depletion width of the junction.
- Magnetically ordered materials
- Surfaces and interfaces
- Thin films