Electronic transport and magnetoresistance of a heterojunction composed of La0.7Ce0.3MnO3 and 1 wt% Nb-doped SrTiO3

Y. W. Xie, D. J. Wang, Yunzhong Chen, S. Liang, W. M. Lu, B. G. Shen, J. R. Sun

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We experimentally studied the transport properties and magnetoresistance behavior of a La0.7Ce0.3MnO3/SrTiO3 (doped by 1 wt% Nb) junction. Based on the analyses of the current–voltage relations and the depletion width, we conclude that the dominant transport mechanism of the junction is tunneling. The magnetoresistance of the junction is negative throughout the whole bias voltage range (from −1 V to 0.4 V) and the whole temperature range (below 300 K). It is believed that the magnetic field depresses the junction resistance by reducing the depletion width of the junction.
Original languageEnglish
JournalSolid State Communications
Volume143
Issue number3
Pages (from-to)131-135
Number of pages5
ISSN0038-1098
DOIs
Publication statusPublished - 2007
Externally publishedYes

Keywords

  • Heterojunctions
  • Magnetically ordered materials
  • Surfaces and interfaces
  • Thin films

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