Electronic structure and optical properties of 2D hexagonal Boron Arsenide

Mathias Rosdahl Brems; Morten Willatzen

doi:10.1109/NUSOD.2019.8806793

Electronic structure and optical properties of 2D hexagonal Boron Arsenide

Mathias Rosdahl Brems, Morten Willatzen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We examine the electronic structure of two-dimensional hexagonal boron arsenide using k.p theory, method of invariants, and density functional theory. The fundamental band gap occuring at the K point is 0.76 eV, however, this transition is not allowed in the dipole approximation. The conduction band at the Γ point is highly sensitive to strain or electric fields that renders transition into a metallic state possible. We investigate the optical absorption of boron arsenide and the possibilities of tuning by means of strain or electric field.

Original language	English
Title of host publication	Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices
Editors	Karin Hinzer, Joachim Piprek
Number of pages	2
Publisher	IEEE Computer Society Press
Publication date	1 Jul 2019
Pages	115-116
Article number	8806793
ISBN (Electronic)	9781728116471
DOIs	https://doi.org/10.1109/NUSOD.2019.8806793
Publication status	Published - 1 Jul 2019
Event	19th International Conference on Numerical Simulation of Optoelectronic Devices - Ottawa, Canada Duration: 8 Jul 2019 → 12 Jul 2019 Conference number: 19

Conference

Conference	19th International Conference on Numerical Simulation of Optoelectronic Devices
Number	19
Country/Territory	Canada
City	Ottawa
Period	08/07/2019 → 12/07/2019

Series	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod
Volume	2019-July
ISSN	2158-3234

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Brems, Mathias Rosdahl ; Willatzen, Morten. / Electronic structure and optical properties of 2D hexagonal Boron Arsenide. Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices. editor / Karin Hinzer ; Joachim Piprek. IEEE Computer Society Press, 2019. pp. 115-116 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod, Vol. 2019-July).

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abstract = "We examine the electronic structure of two-dimensional hexagonal boron arsenide using k.p theory, method of invariants, and density functional theory. The fundamental band gap occuring at the K point is 0.76 eV, however, this transition is not allowed in the dipole approximation. The conduction band at the Γ point is highly sensitive to strain or electric fields that renders transition into a metallic state possible. We investigate the optical absorption of boron arsenide and the possibilities of tuning by means of strain or electric field.",

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doi = "10.1109/NUSOD.2019.8806793",

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booktitle = "Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices",

publisher = "IEEE Computer Society Press",

note = "19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 ; Conference date: 08-07-2019 Through 12-07-2019",

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Brems, MR & Willatzen, M 2019, Electronic structure and optical properties of 2D hexagonal Boron Arsenide. in K Hinzer & J Piprek (eds), Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices., 8806793, IEEE Computer Society Press, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod, vol. 2019-July, pp. 115-116, 19th International Conference on Numerical Simulation of Optoelectronic Devices, Ottawa, Canada, 08/07/2019. https://doi.org/10.1109/NUSOD.2019.8806793

Electronic structure and optical properties of 2D hexagonal Boron Arsenide. / Brems, Mathias Rosdahl; Willatzen, Morten.
Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices. ed. / Karin Hinzer; Joachim Piprek. IEEE Computer Society Press, 2019. p. 115-116 8806793 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod, Vol. 2019-July).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Brems MR, Willatzen M. Electronic structure and optical properties of 2D hexagonal Boron Arsenide. In Hinzer K, Piprek J, editors, Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices. IEEE Computer Society Press. 2019. p. 115-116. 8806793. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod, Vol. 2019-July). doi: 10.1109/NUSOD.2019.8806793

Electronic structure and optical properties of 2D hexagonal Boron Arsenide

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