Electronic structure and optical properties of 2D hexagonal Boron Arsenide

Mathias Rosdahl Brems, Morten Willatzen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We examine the electronic structure of two-dimensional hexagonal boron arsenide using k.p theory, method of invariants, and density functional theory. The fundamental band gap occuring at the K point is 0.76 eV, however, this transition is not allowed in the dipole approximation. The conduction band at the Γ point is highly sensitive to strain or electric fields that renders transition into a metallic state possible. We investigate the optical absorption of boron arsenide and the possibilities of tuning by means of strain or electric field.

Original languageEnglish
Title of host publicationProceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices
EditorsKarin Hinzer, Joachim Piprek
Number of pages2
PublisherIEEE Computer Society Press
Publication date1 Jul 2019
Pages115-116
Article number8806793
ISBN (Electronic)9781728116471
DOIs
Publication statusPublished - 1 Jul 2019
Event19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 - Ottawa, Canada
Duration: 8 Jul 201912 Jul 2019

Conference

Conference19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019
CountryCanada
CityOttawa
Period08/07/201912/07/2019
SeriesProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod
Volume2019-July
ISSN2158-3234

Cite this

Brems, M. R., & Willatzen, M. (2019). Electronic structure and optical properties of 2D hexagonal Boron Arsenide. In K. Hinzer, & J. Piprek (Eds.), Proceedings of 19th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 115-116). [8806793] IEEE Computer Society Press. Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Nusod, Vol.. 2019-July https://doi.org/10.1109/NUSOD.2019.8806793