Electronic properties of graphene antidot lattices

Joachim Alexander Fürst, Jesper Goor Pedersen, C. Flindt, Asger Mortensen, Mads Brandbyge, T.G. Pedersen, Antti-Pekka Jauho

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Abstract

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.
Original languageEnglish
JournalNew Journal of Physics
Volume11
Pages (from-to)095020
ISSN1367-2630
DOIs
Publication statusPublished - 2009

Cite this

Fürst, J. A., Pedersen, J. G., Flindt, C., Mortensen, A., Brandbyge, M., Pedersen, T. G., & Jauho, A-P. (2009). Electronic properties of graphene antidot lattices. New Journal of Physics, 11, 095020. https://doi.org/10.1088/1367-2630/11/9/095020