Electron trap annealing in neutron transmutation doped silicon

J. Guldberg

doi:10.1063/1.89785

Electron trap annealing in neutron transmutation doped silicon

J. Guldberg

Department of Physics

Technical University of Denmark

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Abstract

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	31
Issue number	9
Pages (from-to)	578-579
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.89785
Publication status	Published - 1977

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Copyright (1977) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Electron trap annealing in neutron transmutation doped silicon",

abstract = "Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics.",

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N2 - Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics.

AB - Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics.

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Electron trap annealing in neutron transmutation doped silicon

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