Electron trap annealing in neutron transmutation doped silicon

J. Guldberg

Research output: Contribution to journalJournal articleResearchpeer-review

330 Downloads (Pure)

Abstract

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Volume31
Issue number9
Pages (from-to)578-579
ISSN0003-6951
DOIs
Publication statusPublished - 1977

Bibliographical note

Copyright (1977) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Cite this