Electron spectroscopy study in the NbN growth for NbN/AlN interfaces

M. Lucci; Simone Sanna; G. Contini; N. Zema; V. Merlo; M. Salvato; H.N. Thanh; L. Davoli

doi:10.1016/j.susc.2006.11.078

Electron spectroscopy study in the NbN growth for NbN/AlN interfaces

M. Lucci, Simone Sanna, G. Contini, N. Zema, V. Merlo, M. Salvato, H.N. Thanh, L. Davoli

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

NbN superconductor and wide band gap AlN thin films were deposited using sputtering at room temperature. Study of the nitride interfaces are forerunner to the growth Josephson junctions that are considered able to work in the terahertz frequency. We find that to be compatible with lithography technology and to have a high critical transition temperature, the substrate should not be overheated, and this means working in low power regime to limit the induced heating of the plasma. X-ray photoelectron spectroscopy and X-ray diffraction analysis were performed on samples deposited on crystalline, amorphous, flexible, and nanostructured substrates. The experimental results suggest us how to improve the deposition process in order to obtain the best nitride films as well as NbN/AlN/NbN trilayers for Josephson junction applications.
© 2006 Elsevier B.V. All rights reserved.

Original language	English
Journal	Surface Science
Volume	601
Pages (from-to)	2647–2650
ISSN	0039-6028
DOIs	https://doi.org/10.1016/j.susc.2006.11.078
Publication status	Published - 2007
Externally published	Yes

Keywords

NbN
AIN
Superconducting
Electron spectroscopy
Josephson junctions

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10.1016/j.susc.2006.11.078

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title = "Electron spectroscopy study in the NbN growth for NbN/AlN interfaces",

abstract = "NbN superconductor and wide band gap AlN thin films were deposited using sputtering at room temperature. Study of the nitride interfaces are forerunner to the growth Josephson junctions that are considered able to work in the terahertz frequency. We find that to be compatible with lithography technology and to have a high critical transition temperature, the substrate should not be overheated, and this means working in low power regime to limit the induced heating of the plasma. X-ray photoelectron spectroscopy and X-ray diffraction analysis were performed on samples deposited on crystalline, amorphous, flexible, and nanostructured substrates. The experimental results suggest us how to improve the deposition process in order to obtain the best nitride films as well as NbN/AlN/NbN trilayers for Josephson junction applications. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

keywords = "NbN, AIN, Superconducting, Electron spectroscopy, Josephson junctions",

author = "M. Lucci and Simone Sanna and G. Contini and N. Zema and V. Merlo and M. Salvato and H.N. Thanh and L. Davoli",

year = "2007",

doi = "10.1016/j.susc.2006.11.078",

language = "English",

volume = "601",

pages = "2647–2650",

journal = "Surface Science",

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TY - JOUR

T1 - Electron spectroscopy study in the NbN growth for NbN/AlN interfaces

AU - Lucci, M.

AU - Sanna, Simone

AU - Contini, G.

AU - Zema, N.

AU - Merlo, V.

AU - Salvato, M.

AU - Thanh, H.N.

AU - Davoli, L.

PY - 2007

Y1 - 2007

N2 - NbN superconductor and wide band gap AlN thin films were deposited using sputtering at room temperature. Study of the nitride interfaces are forerunner to the growth Josephson junctions that are considered able to work in the terahertz frequency. We find that to be compatible with lithography technology and to have a high critical transition temperature, the substrate should not be overheated, and this means working in low power regime to limit the induced heating of the plasma. X-ray photoelectron spectroscopy and X-ray diffraction analysis were performed on samples deposited on crystalline, amorphous, flexible, and nanostructured substrates. The experimental results suggest us how to improve the deposition process in order to obtain the best nitride films as well as NbN/AlN/NbN trilayers for Josephson junction applications. © 2006 Elsevier B.V. All rights reserved.

AB - NbN superconductor and wide band gap AlN thin films were deposited using sputtering at room temperature. Study of the nitride interfaces are forerunner to the growth Josephson junctions that are considered able to work in the terahertz frequency. We find that to be compatible with lithography technology and to have a high critical transition temperature, the substrate should not be overheated, and this means working in low power regime to limit the induced heating of the plasma. X-ray photoelectron spectroscopy and X-ray diffraction analysis were performed on samples deposited on crystalline, amorphous, flexible, and nanostructured substrates. The experimental results suggest us how to improve the deposition process in order to obtain the best nitride films as well as NbN/AlN/NbN trilayers for Josephson junction applications. © 2006 Elsevier B.V. All rights reserved.

KW - NbN

KW - AIN

KW - Superconducting

KW - Electron spectroscopy

KW - Josephson junctions

U2 - 10.1016/j.susc.2006.11.078

DO - 10.1016/j.susc.2006.11.078

M3 - Journal article

VL - 601

SP - 2647

EP - 2650

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -

Electron spectroscopy study in the NbN growth for NbN/AlN interfaces

Abstract

Keywords

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